Fast Charge Sensing of Si/SiGe Quantum Dots via a High-Frequency Accumulation Gate

Christian Volk, Anasua Chatterjee, Fabio Ansaloni, Charles M. Marcus, Ferdinand Kuemmeth*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

12 Citations (Scopus)

Abstract

Quantum dot arrays are a versatile platform for the implementation of spin qubits, as high-bandwidth sensor dots can be integrated with single-, double-, and triple-dot qubits yielding fast and high-fidelity qubit readout. However, for undoped silicon devices, reflectometry off sensor ohmics suffers from the finite resistivity of the two-dimensional electron gas (2DEG), and alternative readout methods are limited to measuring qubit capacitance, rather than qubit charge. By coupling a surface-mount resonant circuit to the plunger gate of a high-impedance sensor, we realized a fast charge sensing technique that is compatible with resistive 2DEGs. We demonstrate this by acquiring at high speed charge stability diagrams of double- and triple-dot arrays in Si/SiGe heterostructures as well as pulsed-gate single-shot charge and spin readout with integration times as low as 2.4 μs.

Original languageEnglish
Pages (from-to)5628-5633
JournalNano Letters
Volume19
Issue number8
DOIs
Publication statusPublished - 2019

Keywords

  • Charge sensing
  • quantum dots
  • reflectometry
  • Si/SiGe
  • silicon
  • spin qubits

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