FE modeling of Cu wire bond process and reliability

CA Yuan, E Weltevreden, P van den Akker, R Kregting, J de Vreugd, GQ Zhang

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

6 Citations (Scopus)

Abstract

Copper based wire bonding technology is widely accepted by electronic packaging industry due to the world-wide cost reduction actions (compared to gold wire bond). However, the mechanical characterization of copper wire differs from the gold wire; hence the new wire bond process setting and new bond pad structure is required. It also refers to the new intermetallic compound (IMC) will form at the interface of wire and bond pad. This paper will present the finite element analysis of the copper wire bond process and IMC forming and results in the stress pattern shift during the processes. Keywords: Cu wire bond, IC BE structure (BEOL), epoxy curing, IMC grow
Original languageEnglish
Title of host publicationProceedings of the 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems, EuroSimE 2011, 18-20 April 2011, Linz, Austria
EditorsLJ Ernst, GQ Zhang, WD van Driel, P Rodgers, C Bailey, O de Saint Leger
Place of PublicationLinz, Austria
PublisherIEEE Society
Pages1-5
Number of pages5
ISBN (Print)978-1-4577-0105-4
Publication statusPublished - 2011
EventEuroSimE 2011: 12th International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems - Linz, Austria
Duration: 18 Apr 201120 Apr 2011
Conference number: 12

Publication series

Name
PublisherIEEE

Conference

ConferenceEuroSimE 2011
CountryAustria
CityLinz
Period18/04/1120/04/11

Keywords

  • conference contrib. refereed
  • Conf.proc. > 3 pag

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