Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

M Poljak; V Jovanovic; T Suligoj

doi:10.1109/SOI.2011.6081700

Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

M Poljak, V Jovanovic, T Suligoj

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

4 Citations (Scopus)

Original language	English
Title of host publication	2011 IEEE International SOI Conference
Editors	W Xiong
Place of Publication	Tempe, AZ, USA
Publisher	IEEE
Pages	156-157
Number of pages	2
ISBN (Print)	978-1-61284-760-3
DOIs	https://doi.org/10.1109/SOI.2011.6081700
Publication status	Published - 2011
Event	2011 IEEE International SOI Conference - Tempe, AZ, USA Duration: 3 Oct 2011 → 6 Oct 2011

Publication series

Name
Publisher	IEEE

Conference

Conference	2011 IEEE International SOI Conference
Period	3/10/11 → 6/10/11

Keywords

conference contrib. refereed
Geen BTA classificatie

Access to Document

10.1109/SOI.2011.6081700

Cite this

@inproceedings{c9789113881e495f9d382ab70c22007d,

title = "Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm",

keywords = "conference contrib. refereed, Geen BTA classificatie",

author = "M Poljak and V Jovanovic and T Suligoj",

year = "2011",

doi = "10.1109/SOI.2011.6081700",

language = "English",

isbn = "978-1-61284-760-3",

publisher = "IEEE",

pages = "156--157",

editor = "W Xiong",

booktitle = "2011 IEEE International SOI Conference",

address = "United States",

note = "2011 IEEE International SOI Conference ; Conference date: 03-10-2011 Through 06-10-2011",

}

TY - GEN

T1 - Features of electron mobility in ultrathin-body InGaAs-on-insulator MOSFETs down to body thickness of 2 nm

AU - Poljak, M

AU - Jovanovic, V

AU - Suligoj, T

PY - 2011

Y1 - 2011

KW - conference contrib. refereed

KW - Geen BTA classificatie

U2 - 10.1109/SOI.2011.6081700

DO - 10.1109/SOI.2011.6081700

M3 - Conference contribution

SN - 978-1-61284-760-3

SP - 156

EP - 157

BT - 2011 IEEE International SOI Conference

A2 - Xiong, W

PB - IEEE

CY - Tempe, AZ, USA

T2 - 2011 IEEE International SOI Conference

Y2 - 3 October 2011 through 6 October 2011

ER -