Field Effect Transistors: High-Performance Phosphorene-Based Transistors Using a Novel Exfoliation-Free Direct Crystallization on Silicon Substrates (Adv. Mater. Interfaces 17/2020)

Mona Rajabali; Mehrnaz Esfandiari; Shima Rajabali; Mojdeh Vakili-Tabatabaei; Shokatollah Mohajerzadeh; Shams Mohajerzadeh

doi:10.1002/admi.202070096

Field Effect Transistors: High-Performance Phosphorene-Based Transistors Using a Novel Exfoliation-Free Direct Crystallization on Silicon Substrates (Adv. Mater. Interfaces 17/2020)

Mona Rajabali, Mehrnaz Esfandiari, Shima Rajabali, Mojdeh Vakili-Tabatabaei, Shokatollah Mohajerzadeh, Shams Mohajerzadeh

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Original language	English
Article number	2070096
Journal	Advanced Materials Interfaces
Volume	7
Issue number	17
DOIs	https://doi.org/10.1002/admi.202070096
Publication status	Published - 2020
Externally published	Yes

Keywords

field effect transistors
large area formation, laser assisted crystallization
phosphorene sheets
silicon substrates

Access to Document

10.1002/admi.202070096

Cite this

Rajabali, M., Esfandiari, M., Rajabali, S., Vakili-Tabatabaei, M., Mohajerzadeh, S., & Mohajerzadeh, S. (2020). Field Effect Transistors: High-Performance Phosphorene-Based Transistors Using a Novel Exfoliation-Free Direct Crystallization on Silicon Substrates (Adv. Mater. Interfaces 17/2020). Advanced Materials Interfaces, 7(17), Article 2070096. https://doi.org/10.1002/admi.202070096

@article{21bb9868cb5744a6ad06cb03ae5a0bf5,

title = "Field Effect Transistors: High-Performance Phosphorene-Based Transistors Using a Novel Exfoliation-Free Direct Crystallization on Silicon Substrates (Adv. Mater. Interfaces 17/2020)",

keywords = "field effect transistors, large area formation, laser assisted crystallization, phosphorene sheets, silicon substrates",

author = "Mona Rajabali and Mehrnaz Esfandiari and Shima Rajabali and Mojdeh Vakili-Tabatabaei and Shokatollah Mohajerzadeh and Shams Mohajerzadeh",

year = "2020",

doi = "10.1002/admi.202070096",

language = "English",

volume = "7",

journal = "Advanced Materials Interfaces",

issn = "2196-7350",

publisher = "John Wiley and Sons Ltd",

number = "17",

}

Rajabali, M, Esfandiari, M, Rajabali, S, Vakili-Tabatabaei, M, Mohajerzadeh, S & Mohajerzadeh, S 2020, 'Field Effect Transistors: High-Performance Phosphorene-Based Transistors Using a Novel Exfoliation-Free Direct Crystallization on Silicon Substrates (Adv. Mater. Interfaces 17/2020)', Advanced Materials Interfaces, vol. 7, no. 17, 2070096. https://doi.org/10.1002/admi.202070096

Field Effect Transistors: High-Performance Phosphorene-Based Transistors Using a Novel Exfoliation-Free Direct Crystallization on Silicon Substrates (Adv. Mater. Interfaces 17/2020). / Rajabali, Mona; Esfandiari, Mehrnaz; Rajabali, Shima et al.
In: Advanced Materials Interfaces, Vol. 7, No. 17, 2070096, 2020.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - Field Effect Transistors

T2 - High-Performance Phosphorene-Based Transistors Using a Novel Exfoliation-Free Direct Crystallization on Silicon Substrates (Adv. Mater. Interfaces 17/2020)

AU - Rajabali, Mona

AU - Esfandiari, Mehrnaz

AU - Rajabali, Shima

AU - Vakili-Tabatabaei, Mojdeh

AU - Mohajerzadeh, Shokatollah

AU - Mohajerzadeh, Shams

PY - 2020

Y1 - 2020

KW - field effect transistors

KW - large area formation, laser assisted crystallization

KW - phosphorene sheets

KW - silicon substrates

UR - https://www.scopus.com/pages/publications/85090495558

U2 - 10.1002/admi.202070096

DO - 10.1002/admi.202070096

M3 - Article

AN - SCOPUS:85090495558

SN - 2196-7350

VL - 7

JO - Advanced Materials Interfaces

JF - Advanced Materials Interfaces

IS - 17

M1 - 2070096

ER -

Field Effect Transistors: High-Performance Phosphorene-Based Transistors Using a Novel Exfoliation-Free Direct Crystallization on Silicon Substrates (Adv. Mater. Interfaces 17/2020)

Keywords

Access to Document

Other files and links

Cite this