Flux-pinning effects in MgB2 doped with nano-scale TiO2 and SiC inclusions

JS Park, GH Kim, YP Lee, VL Svetchnikov, VG Prokhorov, JH Kang, VA Khokhlov, P Mikheenko

    Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

    Original languageUndefined/Unknown
    Title of host publicationFlux-pinning effects in MgB2 doped with nano-scale TiO2 and SiC inclusions
    Editors s.n.
    Place of PublicationSeoul
    PublisherKOREAN PHYSICAL SOC,
    Pages1498-1501
    Number of pages4
    Publication statusPublished - 2008
    Event5th International Conference on Advanced Materials - Seoul
    Duration: 12 Dec 200714 Dec 2007

    Publication series

    Name
    PublisherKOREAN PHYSICAL SOC
    NameKorean Physical Society. Journal
    Volume53
    ISSN (Print)0374-4884

    Conference

    Conference5th International Conference on Advanced Materials
    Period12/12/0714/12/07

    Keywords

    • conference contrib. refereed
    • Conf.proc. > 3 pag

    Cite this

    Park, JS., Kim, GH., Lee, YP., Svetchnikov, VL., Prokhorov, VG., Kang, JH., Khokhlov, VA., & Mikheenko, P. (2008). Flux-pinning effects in MgB2 doped with nano-scale TiO2 and SiC inclusions. In s.n. (Ed.), Flux-pinning effects in MgB2 doped with nano-scale TiO2 and SiC inclusions (pp. 1498-1501). (Korean Physical Society. Journal; Vol. 53). KOREAN PHYSICAL SOC,.