Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

S Dobrovolskiy, AE Yakshin, FD Tichelaar, J Verhoeven, E Louis, F Bijkerk

    Research output: Contribution to journalArticleScientificpeer-review

    Original languageEnglish
    Pages (from-to)560-567
    Number of pages8
    JournalNuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
    Issue number6
    Publication statusPublished - 2010


    • academic journal papers
    • CWTS JFIS < 0.75

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