Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

S Dobrovolskiy, AE Yakshin, FD Tichelaar, J Verhoeven, E Louis, F Bijkerk

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	English
Pages (from-to)	560-567
Number of pages	8
Journal	Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms
Volume	268
Issue number	6
DOIs	https://doi.org/10.1016/j.nimb.2009.12.022
Publication status	Published - 2010

Keywords

This output contributes to the following UN Sustainable Development Goals (SDGs)

@article{260df5bb1e7147c8a19ef6c0f0c1e5cb,

title = "Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing",

keywords = "academic journal papers, CWTS JFIS < 0.75",

author = "S Dobrovolskiy and AE Yakshin and FD Tichelaar and J Verhoeven and E Louis and F Bijkerk",

year = "2010",

doi = "10.1016/j.nimb.2009.12.022",

language = "English",

volume = "268",

pages = "560--567",

journal = "Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms",

issn = "0168-583X",

publisher = "Elsevier",

number = "6",

}

TY - JOUR

T1 - Formation of Si/SiC multilayers by low-energy ion implantation and thermal annealing

AU - Dobrovolskiy, S

AU - Yakshin, AE

AU - Tichelaar, FD

AU - Verhoeven, J

AU - Louis, E

AU - Bijkerk, F

PY - 2010

Y1 - 2010

KW - academic journal papers

KW - CWTS JFIS < 0.75

U2 - 10.1016/j.nimb.2009.12.022

DO - 10.1016/j.nimb.2009.12.022

M3 - Article

SN - 0168-583X

VL - 268

SP - 560

EP - 567

JO - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

JF - Nuclear Instruments & Methods in Physics Research. Section B: Beam Interactions with Materials and Atoms

IS - 6

ER -