From Si Towards SiC Technology for Harsh Environment Sensing

Luke Middelburg; Willem van Driel; Kouchi Zhang

doi:10.1007/978-3-030-16577-2_1

From Si Towards SiC Technology for Harsh Environment Sensing

Luke Middelburg, Willem van Driel, Kouchi Zhang

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Chapter › Scientific › peer-review

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Abstract

In the coming decade, the development in the area of More than Moore will certainly take over from Moore’s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.

Original language	English
Title of host publication	Sensor Systems Simulations: From Concept to Solution
Editors	Willem Dirk van Driel, Oliver Pyper, Cornelia Schumann
Publisher	Springer
Pages	1-15
Number of pages	15
ISBN (Electronic)	978-3-030-16577-2
ISBN (Print)	978-3-030-16576-5
DOIs	https://doi.org/10.1007/978-3-030-16577-2_1
Publication status	Published - 2020

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

Keywords

Sensor integration
More than Moore
Harsh environments
WBG
SiC

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10.1007/978-3-030-16577-2_1

Middelburg2020_Chapter_FromSiTowardsSiCTechnologyForHFinal published version, 493 KB

Cite this

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title = "From Si Towards SiC Technology for Harsh Environment Sensing",

abstract = "In the coming decade, the development in the area of More than Moore will certainly take over from Moore{\textquoteright}s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.",

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doi = "10.1007/978-3-030-16577-2_1",

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N2 - In the coming decade, the development in the area of More than Moore will certainly take over from Moore’s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.

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From Si Towards SiC Technology for Harsh Environment Sensing

Abstract

Bibliographical note

Keywords

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