From Si Towards SiC Technology for Harsh Environment Sensing

Luke Middelburg; Willem van Driel; Kouchi Zhang

doi:10.1007/978-3-030-16577-2_1

From Si Towards SiC Technology for Harsh Environment Sensing

Luke Middelburg, Willem van Driel, Kouchi Zhang

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Chapter › Scientific › peer-review

Abstract

In the coming decade, the development in the area of More than Moore will certainly take over from Moore’s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.

Original language	English
Title of host publication	Sensor Systems Simulations: From Concept to Solution
Editors	Willem Dirk van Driel, Oliver Pyper, Cornelia Schumann
Publisher	Springer
Pages	1-15
Number of pages	15
ISBN (Electronic)	978-3-030-16577-2
ISBN (Print)	978-3-030-16576-5
DOIs	https://doi.org/10.1007/978-3-030-16577-2_1
Publication status	Published - 2020

Keywords

Sensor integration
More than Moore
Harsh environments
WBG
SiC

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10.1007/978-3-030-16577-2_1

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title = "From Si Towards SiC Technology for Harsh Environment Sensing",

abstract = "In the coming decade, the development in the area of More than Moore will certainly take over from Moore{\textquoteright}s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.",

keywords = "Sensor integration, More than Moore, Harsh environments, WBG, SiC",

author = "Luke Middelburg and {van Driel}, Willem and Kouchi Zhang",

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AU - Middelburg, Luke

AU - van Driel, Willem

AU - Zhang, Kouchi

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N2 - In the coming decade, the development in the area of More than Moore will certainly take over from Moore’s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.

AB - In the coming decade, the development in the area of More than Moore will certainly take over from Moore’s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.

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KW - SiC

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