Abstract
In the coming decade, the development in the area of More than Moore will certainly take over from Moore’s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.
| Original language | English |
|---|---|
| Title of host publication | Sensor Systems Simulations: From Concept to Solution |
| Editors | Willem Dirk van Driel, Oliver Pyper, Cornelia Schumann |
| Publisher | Springer |
| Pages | 1-15 |
| Number of pages | 15 |
| ISBN (Electronic) | 978-3-030-16577-2 |
| ISBN (Print) | 978-3-030-16576-5 |
| DOIs | |
| Publication status | Published - 2020 |
Keywords
- Sensor integration
- More than Moore
- Harsh environments
- WBG
- SiC
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Cite this
Middelburg, L., van Driel, W., & Zhang, K. (2020). From Si Towards SiC Technology for Harsh Environment Sensing. In W. D. van Driel, O. Pyper, & C. Schumann (Eds.), Sensor Systems Simulations: From Concept to Solution (pp. 1-15). Springer. https://doi.org/10.1007/978-3-030-16577-2_1