From Si Towards SiC Technology for Harsh Environment Sensing

Research output: Chapter in Book/Conference proceedings/Edited volumeChapterScientificpeer-review

Abstract

In the coming decade, the development in the area of More than Moore will certainly take over from Moore’s Law. Sensor development and sensor integration will prevail above lower node development. New packaging solutions will be developed which will fuel the integration of sensors. These developments can still be silicon based but where harsh environments are involved wide-bandgap (WBG) materials, such as gallium nitride (GaN) or silicon carbide (SiC), will take over the development efforts spend. In this chapter, the use of WBG SiC material is discussed and reviewed towards possible applications for sensing under harsh environment exposure.
Original languageEnglish
Title of host publicationSensor Systems Simulations: From Concept to Solution
EditorsWillem Dirk van Driel, Oliver Pyper, Cornelia Schumann
PublisherSpringer
Pages1-15
Number of pages15
ISBN (Electronic)978-3-030-16577-2
ISBN (Print)978-3-030-16576-5
DOIs
Publication statusPublished - 2020

Keywords

  • Sensor integration
  • More than Moore
  • Harsh environments
  • WBG
  • SiC

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  • Cite this

    Middelburg, L., van Driel, W., & Zhang, K. (2020). From Si Towards SiC Technology for Harsh Environment Sensing. In W. D. van Driel, O. Pyper, & C. Schumann (Eds.), Sensor Systems Simulations: From Concept to Solution (pp. 1-15). Springer. https://doi.org/10.1007/978-3-030-16577-2_1