Gas Source MBE growth of Si/SiGe device materials

K Werner; AJ Storm; S Butzke; JWH Maes; M van Rooy; PFA Alkemade; E Algra; MAJ Somers; BGM de Lange; EWJM van der Drift; T Zijlstra; S Radelaar

Gas Source MBE growth of Si/SiGe device materials

K Werner, AJ Storm, S Butzke, JWH Maes, M van Rooy, PFA Alkemade, E Algra, MAJ Somers, BGM de Lange, EWJM van der Drift, T Zijlstra, S Radelaar

QN/Kavli Nanolab Delft

Research output: Contribution to journal › Article › Scientific › peer-review

13 Citations (Scopus)

Original language	Undefined/Unknown
Pages (from-to)	223-234
Number of pages	12
Journal	Journal of Crystal Growth
Volume	164
Publication status	Published - 1996

Cite this

@article{77dc276641e048a1857ffc880c744193,

title = "Gas Source MBE growth of Si/SiGe device materials",

author = "K Werner and AJ Storm and S Butzke and JWH Maes and \{van Rooy\}, M and PFA Alkemade and E Algra and MAJ Somers and \{de Lange\}, BGM and \{van der Drift\}, EWJM and T Zijlstra and S Radelaar",

year = "1996",

language = "Undefined/Unknown",

volume = "164",

pages = "223--234",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Gas Source MBE growth of Si/SiGe device materials

AU - Werner, K

AU - Storm, AJ

AU - Butzke, S

AU - Maes, JWH

AU - van Rooy, M

AU - Alkemade, PFA

AU - Algra, E

AU - Somers, MAJ

AU - de Lange, BGM

AU - van der Drift, EWJM

AU - Zijlstra, T

AU - Radelaar, S

PY - 1996

Y1 - 1996

UR - https://www.scopus.com/pages/publications/0030190411

M3 - Article

SN - 0022-0248

VL - 164

SP - 223

EP - 234

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Gas Source MBE growth of Si/SiGe device materials

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