Gate-controlled magnetoresistance of a paramagnetic-insulator|platinum interface

L. Liang, J. Shan, Q. H. Chen, J. M. Lu, G. R. Blake, T. T.M. Palstra, G. E.W. Bauer*, B. J. Van Wees, J. T. Ye

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)


We report an electric-field-induced in-plane magnetoresistance of an atomically flat paramagnetic insulator|platinum (Pt) interface at low temperatures with an ionic liquid gate. Transport experiments as a function of applied magnetic field strength and direction obey the spin Hall magnetoresistance phenomenology with perpendicular magnetic anisotropy. Our results establish the utility of ionic gating as an alternative method to control spintronic devices without using ferromagnets.

Original languageEnglish
Article number134402
Number of pages13
JournalPhysical Review B
Publication statusPublished - 1 Oct 2018
Externally publishedYes


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