Gate fidelity and coherence of an electron spin in an Si/SiGe quantum dot with micromagnet

Erika Kawakami, Thibaut Jullien, Pasquale Scarlino, Daniel R. Ward, Donald E. Savage, Max G. Lagally, Viatcheslav V. Dobrovitski, Mark Friesen, Susan N. Coppersmith, Mark A. Eriksson, Lieven M.K. Vandersypen

Research output: Contribution to journalArticleScientificpeer-review

75 Citations (Scopus)
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Abstract

The gate fidelity and the coherence time of a quantum bit (qubit) are important benchmarks for quantum computation. We construct a qubit using a single electron spin in an Si/SiGe quantum dot and control it electrically via an artificial spin-orbit field from a micromagnet. We measure an average single-qubit gate fidelity of ∼99% using randomized benchmarking, which is consistent with dephasing from the slowly evolving nuclear spins in the substrate. The coherence time measured using dynamical decoupling extends up to ∼400 μs for 128 decoupling pulses, with no sign of saturation. We find evidence that the coherence time is limited by noise in the 10-kHz to 1-MHz range, possibly because charge noise affects the spin via the micromagnet gradient. This work shows that an electron spin in an Si/SiGe quantum dot is a good candidate for quantum information processing as well as for a quantum memory, even without isotopic purification.

Original languageEnglish
Pages (from-to)11738-11743
Number of pages6
JournalProceedings of the National Academy of Sciences of the United States of America
Volume113
Issue number42
DOIs
Publication statusPublished - 18 Oct 2016

Keywords

  • Dynamical decoupling
  • Electron spin
  • Qubit
  • Randomized benchmarking
  • Si/SiGe quantum dot

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