Original language | English |
---|---|
Pages (from-to) | 1-5 |
Number of pages | 5 |
Journal | Applied Physics Letters |
Volume | 106 |
Issue number | 14 |
DOIs | |
Publication status | Published - 2015 |
Gate-tunable high mobility remote-doped InSb/In1-xAlxSb quantum well heterostructures
W Yi, AA Kiselev, J Thorp, R Noah, BM Nguyen, S Bui, RD Rajavel, T Hussain, MF Gyure, P Kratz, Q Qian, MJ Manfra, VS Pribiag, LP Kouwenhoven, CM Marcus, M Sokolich
Research output: Contribution to journal › Article › Scientific › peer-review
28
Citations
(Scopus)