General Considerations for Improving Photovoltage in Metal-Insulator-Semiconductor Photoanodes

Ibadillah A. Digdaya, Bartek J. Trześniewski, Gede W.P. Adhyaksa, E.C. Garnett, Wilson A. Smith

Research output: Contribution to journalArticleScientificpeer-review

31 Citations (Scopus)
46 Downloads (Pure)


Metal-insulator-semiconductor (MIS) photoelectrodes offer a simple alternative to the traditional semiconductor-liquid junction and the conventional p-n junction electrode. Highly efficient MIS photoanodes require interfacial surface passivating oxides and high workfunction metals to produce a high photovoltage. Herein, we investigate and analyze the effect of interfacial oxides and metal workfunctions on the barrier height and the photovoltage of a c-Si photoanode. We use two metal components in a bimetal contact configuration and observe the modulation of the effective barrier height and the resulting photovoltage as a function of the secondary outer metal. The photovoltage shows a strong linear dependence by increasing the inner metal workfunction, with the highest photovoltage achieved by a MIS photoanode using a platinum inner metal. We also found that coupling a thin aluminium oxide with an interfacial silicon oxide and controlling the oxide thickness can significantly improve the photovoltage of an MIS junction photoanode.

Original languageEnglish
Pages (from-to)5462-5471
JournalJournal of Physical Chemistry C
Issue number10
Publication statusPublished - 2018


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