Germanium Quantum-Well Josephson Field-Effect Transistors and Interferometers

Florian Vigneau, Raisei Mizokuchi, Dante Colao Zanuz, Xuhai Huang, Susheng Tan, Romain Maurand, Sergey Frolov, Amir Sammak, Giordano Scappucci, Francois Lefloch, Silvano De Franceschi

Research output: Contribution to journalArticleScientificpeer-review

18 Citations (Scopus)

Abstract

Hybrid superconductor-semiconductor structures attract increasing attention owing to a variety of potential applications in quantum computing devices. They can serve the realization of topological superconducting systems as well as gate-tunable superconducting quantum bits. Here, we combine a SiGe/Ge/SiGe quantum-well heterostructure hosting high-mobility two-dimensional holes and aluminum superconducting leads to realize prototypical hybrid devices, such as Josephson field-effect transistors (JoFETs) and superconducting quantum interference devices (SQUIDs). We observe gate-controlled supercurrent transport with Ge channels as long as one micrometer and estimate the induced superconducting gap from tunnel spectroscopy measurements. Transmission electron microscopy reveals the diffusion of Ge into the Al contacts, whereas no Al is detected in the Ge channel.

Original languageEnglish
Pages (from-to)1023-1027
JournalNano Letters
Volume19
Issue number2
DOIs
Publication statusPublished - 2019

Keywords

  • Ge quantum well
  • Josephson field-effect transistor
  • proximity-effect-induced superconductivity
  • superconducting quantum interference device
  • two-dimensional hole gas

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