Gettering by overpressurized bubbles induced by high-energy He-implantation in silicon

G Regula; R El Bouayadi; B Pichaud; S Godey; R Delamare; E Ntsoenzok; A van Veen

Gettering by overpressurized bubbles induced by high-energy He-implantation in silicon

G Regula, R El Bouayadi, B Pichaud, S Godey, R Delamare, E Ntsoenzok, A van Veen

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

1 Citation (Scopus)

Original language	Undefined/Unknown
Title of host publication	Defect and Impurity Engineered Semiconductors and Devices III
Editors	S Ashok, J Chevalier, N M Johnson, B L Sopori, H Okushi
Place of Publication	San Francisco California
Publisher	Materials Research Society
Pages	F4.2/1-F4.2/6
Publication status	Published - 2002
Event	MRS meeting - San Francisco California Duration: 1 Apr 2002 → 5 Apr 2002

Publication series

Name
Publisher	The Materials Research Society

Name
Volume	719

Conference

Conference	MRS meeting
Period	1/04/02 → 5/04/02

Keywords

Conf.proc. > 3 pag

Cite this

Regula, G., El Bouayadi, R., Pichaud, B., Godey, S., Delamare, R., Ntsoenzok, E., & van Veen, A. (2002). Gettering by overpressurized bubbles induced by high-energy He-implantation in silicon. In S. Ashok, J. Chevalier, N. M. Johnson, B. L. Sopori, & H. Okushi (Eds.), Defect and Impurity Engineered Semiconductors and Devices III (pp. F4.2/1-F4.2/6). Materials Research Society.

@inproceedings{6e0dcac1996c4a249314202432a25646,

title = "Gettering by overpressurized bubbles induced by high-energy He-implantation in silicon",

keywords = "Conf.proc. > 3 pag",

author = "G Regula and {El Bouayadi}, R and B Pichaud and S Godey and R Delamare and E Ntsoenzok and {van Veen}, A",

year = "2002",

language = "Undefined/Unknown",

publisher = "Materials Research Society",

pages = "F4.2/1--F4.2/6",

editor = "S Ashok and J Chevalier and Johnson, {N M} and Sopori, {B L} and H Okushi",

booktitle = "Defect and Impurity Engineered Semiconductors and Devices III",

address = "United States",

note = "MRS meeting ; Conference date: 01-04-2002 Through 05-04-2002",

}

Regula, G, El Bouayadi, R, Pichaud, B, Godey, S, Delamare, R, Ntsoenzok, E & van Veen, A 2002, Gettering by overpressurized bubbles induced by high-energy He-implantation in silicon. in S Ashok, J Chevalier, NM Johnson, BL Sopori & H Okushi (eds), Defect and Impurity Engineered Semiconductors and Devices III. Materials Research Society, San Francisco California, pp. F4.2/1-F4.2/6, MRS meeting, 1/04/02.

Gettering by overpressurized bubbles induced by high-energy He-implantation in silicon. / Regula, G; El Bouayadi, R; Pichaud, B et al.
Defect and Impurity Engineered Semiconductors and Devices III. ed. / S Ashok; J Chevalier; N M Johnson; B L Sopori; H Okushi. San Francisco California: Materials Research Society, 2002. p. F4.2/1-F4.2/6.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - Gettering by overpressurized bubbles induced by high-energy He-implantation in silicon

AU - Regula, G

AU - El Bouayadi, R

AU - Pichaud, B

AU - Godey, S

AU - Delamare, R

AU - Ntsoenzok, E

AU - van Veen, A

PY - 2002

Y1 - 2002

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - F4.2/1-F4.2/6

BT - Defect and Impurity Engineered Semiconductors and Devices III

A2 - Ashok, S

A2 - Chevalier, J

A2 - Johnson, N M

A2 - Sopori, B L

A2 - Okushi, H

PB - Materials Research Society

CY - San Francisco California

T2 - MRS meeting

Y2 - 1 April 2002 through 5 April 2002

ER -

Regula G, El Bouayadi R, Pichaud B, Godey S, Delamare R, Ntsoenzok E et al. Gettering by overpressurized bubbles induced by high-energy He-implantation in silicon. In Ashok S, Chevalier J, Johnson NM, Sopori BL, Okushi H, editors, Defect and Impurity Engineered Semiconductors and Devices III. San Francisco California: Materials Research Society. 2002. p. F4.2/1-F4.2/6