Ground and two low-lying excited states binding energy in (Al,Ga)N/AlN double quantum wells: temperature and electric field effects

In this study, using a numerical method within the effective mass approximation, we theoretically investigated the effects of temperature and electric field on the binding energy of an on-centre hydrogenic impurity in (Al,Ga)N/AlN double quantum wells. For rectangular, parabolic, and triangular finite potential confinements, the ground and the two lowest excited states binding energies are investigated. Regardless of the shape, our findings show that the size, temperature, and applied electric field induce huge impacts on the binding energy. It reveals that the binding energy (1) is higher in rectangular shape than for other forms, (2) is reduced as the temperature and/or electric field are increased, and (3) is less sensitive to temperature and applied electric field in rectangular confinement compared to other profiles. The results we obtained are very consistent with the literature findings.