Growth-induced electron mobility enhancement at the LaAlO3/SrTiO3 interface

A. Fête, C. Cancellieri, D. Li, D. Stornaiuolo, A. D. Caviglia, S. Gariglio, J. M. Triscone

Research output: Contribution to journalArticleScientificpeer-review

32 Citations (Scopus)


We have studied the electronic properties of the 2D electron liquid present at the LaAlO3/SrTiO3 interface in series of samples prepared at different growth temperatures. We observe that interfaces fabricated at 650 °C exhibit the highest low temperature mobility (≈ 10 000 cm 2 V-1 s-1) and the lowest sheet carrier density (≈ 5 × 10 12 cm-2). These samples show metallic behavior and Shubnikov-de Haas oscillations in their magnetoresistance. Samples grown at higher temperatures (800-900 °C) display carrier densities in the range of ≈ 2-5 × 10 13 cm-2 and mobilities of ≈ 1000 cm 2 V-1 s-1 at 4 K. Reducing their carrier density by field effect to 8 × 10 12 cm-2 lowers their mobilities to ≈ 50 cm 2 V-1 s-1 bringing the conductance to the weak-localization regime.

Original languageEnglish
Article number051604
Pages (from-to)1-5
JournalApplied Physics Letters
Issue number5
Publication statusPublished - 2015
Externally publishedYes

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