Abstract
Iodine vacancies and uncoordinated iodide ions of CsPbI3 films are mainly responsible for nonradiative recombination. Here, we report a composition-engineering passivation method that through guanidium (GA+) and I− forms strong hydrogen bonds to passivate iodine vacancies and reduce defects. Both experimental and theoretical results confirmed strong chemical interactions between GA+ and uncoordinated I− in the GAxCs1−xPbI3 bulk or at the grain boundary. Moreover, GA+ doping could slow down the crystallization speed of perovskite films during the deposition process. As a result, we observed GA+ modified films with much lower defect density, larger grain size, and better carrier extraction and transportation. Upon GA+ passivation, the power conversion efficiency (PCE) is boosted from 18.01% to 19.05%, with open-circuit voltage (VOC) enhancement from 1.08 V to 1.14 V.
Original language | English |
---|---|
Pages (from-to) | 8234-8240 |
Number of pages | 7 |
Journal | Journal of Materials Chemistry C |
Volume | 10 |
Issue number | 21 |
DOIs | |
Publication status | Published - 2022 |
Bibliographical note
Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-careOtherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.