High Current Density Electrical Breakdown of TiS3 Nanoribbon-Based Field-Effect Transistors

Aday J. Molina-Mendoza*, Joshua O. Island, Wendel S. Paz, Jose Manuel Clamagirand, Jose Ramón Ares, Eduardo Flores, Fabrice Leardini, Carlos Sánchez, Nicolás Agraït, Gabino Rubio-Bollinger, Herre S.J. van der Zant, Isabel J. Ferrer, JJ Palacios, Andres Castellanos-Gomez

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

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The high field transport characteristics of nanostructured transistors based on layered materials are not only important from a device physics perspective but also for possible applications in next generation electronics. With the growing promise of layered materials as replacements to conventional silicon technology, the high current density properties of the layered material titanium trisulfide (TiS3) are studied here. The high breakdown current densities of up to 1.7 × 106 A cm−2 are observed in TiS3 nanoribbon-based field-effect transistors, which are among the highest found in semiconducting nanomaterials. Investigating the mechanisms responsible for current breakdown, a thermogravimetric analysis of bulk TiS3 is performed and the results with density functional theory and kinetic Monte Carlo calculations are compared. In conclusion, the oxidation of TiS3 and subsequent desorption of sulfur atoms play an important role in the electrical breakdown of the material in ambient conditions. The results show that TiS3 is an attractive material for high power applications and lend insight into the thermal and defect activated mechanisms responsible for electrical breakdown in nanostructured devices.

Original languageEnglish
Article number1605647
Number of pages9
JournalAdvanced Functional Materials
Issue number13
Publication statusPublished - 5 Apr 2017

Bibliographical note

Accepted Author Manuscript


  • 2D materials
  • field-effect transistors
  • high current density
  • thermal stability
  • titanium trisulfide
  • transition metal trichalcogenides


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