High effective gummel number of CVD boron layers in ultrashallow p+n diode configurations

F Sarubbi, LK Nanver, TLM Scholtes

Research output: Contribution to journal › Article › Scientific › peer-review

46 Citations (Scopus)

Original language	English
Pages (from-to)	1269-1278
Number of pages	10
Journal	IEEE Transactions on Electron Devices
Volume	57
Issue number	6
DOIs	https://doi.org/10.1109/TED.2010.2045672
Publication status	Published - 2010

Keywords

@article{baf73e864f0448b6a69efeebc6ef9b31,

title = "High effective gummel number of CVD boron layers in ultrashallow p+n diode configurations",

keywords = "CWTS 0.75 <= JFIS < 2.00",

author = "F Sarubbi and LK Nanver and TLM Scholtes",

year = "2010",

doi = "10.1109/TED.2010.2045672",

language = "English",

volume = "57",

pages = "1269--1278",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "Institute of Electrical and Electronics Engineers (IEEE)",

number = "6",

}

TY - JOUR

T1 - High effective gummel number of CVD boron layers in ultrashallow p+n diode configurations

AU - Sarubbi, F

AU - Nanver, LK

AU - Scholtes, TLM

PY - 2010

Y1 - 2010

KW - CWTS 0.75 <= JFIS < 2.00

U2 - 10.1109/TED.2010.2045672

DO - 10.1109/TED.2010.2045672

M3 - Article

SN - 0018-9383

VL - 57

SP - 1269

EP - 1278

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 6

ER -