Abstract
Doherty and Mixed-mode outphasing RF power amplifiers (PAs) that make use of package integrated quasi-load insensitive (Pi-QLI) Class-E GaN transistors are presented. The package integrated harmonic terminations facilitate very simple and compact amplifier implementations. Using these proposed devices, a “Class-E” Doherty PA with 58.3% average efficiency and -49 dBc ACPR after linearization, as well as, a Mixed-mode “Class-E” outphasing PA with an average efficiency of 66.6% and -51.6 dBc ACPR, after linearization using a single carrier WCDMA, PAR=7dB at 2.14GHz, are presented.
Original language | English |
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Title of host publication | 2017 IEEE MTT-S International Microwave Symposium (IMS) |
Place of Publication | Piscataway, NJ |
Publisher | IEEE |
Pages | 2029 – 2032 |
Number of pages | 4 |
ISBN (Electronic) | 978-1-5090-6360-4 |
DOIs | |
Publication status | Published - 2017 |
Event | IEEE MTT-S International Microwave Symposium, IMS 2017: Connecting Minds. Exchanging Ideas - Hawaii Convention Center, Honolulu, HI, United States Duration: 4 Jun 2017 → 9 Jun 2017 https://ims2017.org/ |
Conference
Conference | IEEE MTT-S International Microwave Symposium, IMS 2017 |
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Abbreviated title | IMS 2017 |
Country/Territory | United States |
City | Honolulu, HI |
Period | 4/06/17 → 9/06/17 |
Internet address |
Keywords
- High Efficiency
- QLI Class-E
- harmonic matching
- Doherty PA
- Mixed-mode outpasing