High Efficiency RF Power Amplifiers Featuring Package Integrated Load Insensitive Class-E Devices

Abdul Qureshi, Mustafa Acar, Sergio Pires, Leo de Vreede

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

2 Citations (Scopus)

Abstract

Doherty and Mixed-mode outphasing RF power amplifiers (PAs) that make use of package integrated quasi-load insensitive (Pi-QLI) Class-E GaN transistors are presented. The package integrated harmonic terminations facilitate very simple and compact amplifier implementations. Using these proposed devices, a “Class-E” Doherty PA with 58.3% average efficiency and -49 dBc ACPR after linearization, as well as, a Mixed-mode “Class-E” outphasing PA with an average efficiency of 66.6% and -51.6 dBc ACPR, after linearization using a single carrier WCDMA, PAR=7dB at 2.14GHz, are presented.
Original languageEnglish
Title of host publication2017 IEEE MTT-S International Microwave Symposium (IMS)
Place of PublicationPiscataway, NJ
PublisherIEEE
Pages2029 – 2032
Number of pages4
ISBN (Electronic)978-1-5090-6360-4
DOIs
Publication statusPublished - 2017
EventIEEE MTT-S International Microwave Symposium, IMS 2017: Connecting Minds. Exchanging Ideas - Hawaii Convention Center, Honolulu, HI, United States
Duration: 4 Jun 20179 Jun 2017
https://ims2017.org/

Conference

ConferenceIEEE MTT-S International Microwave Symposium, IMS 2017
Abbreviated titleIMS 2017
CountryUnited States
CityHonolulu, HI
Period4/06/179/06/17
Internet address

Keywords

  • High Efficiency
  • QLI Class-E
  • harmonic matching
  • Doherty PA
  • Mixed-mode outpasing

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