High electron mobility in vacuum and ambient for PDIF-CN2 single-crystal transistors

AS Molinari, H Alves, Z Chen, A Facchetti, AF Morpurgo

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	2462-2463
Number of pages	2
Journal	Journal of the American Chemical Society
Volume	131
Publication status	Published - 2009

Keywords

@article{0603a89e82174f6d8da399ad058202ff,

title = "High electron mobility in vacuum and ambient for PDIF-CN2 single-crystal transistors",

keywords = "academic journal papers, CWTS JFIS >= 2.00",

author = "AS Molinari and H Alves and Z Chen and A Facchetti and AF Morpurgo",

year = "2009",

language = "Undefined/Unknown",

volume = "131",

pages = "2462--2463",

journal = "Journal of the American Chemical Society",

issn = "0002-7863",

publisher = "American Chemical Society (ACS)",

}

TY - JOUR

T1 - High electron mobility in vacuum and ambient for PDIF-CN2 single-crystal transistors

AU - Molinari, AS

AU - Alves, H

AU - Chen, Z

AU - Facchetti, A

AU - Morpurgo, AF

PY - 2009

Y1 - 2009

KW - academic journal papers

KW - CWTS JFIS >= 2.00

M3 - Article

SN - 0002-7863

VL - 131

SP - 2462

EP - 2463

JO - Journal of the American Chemical Society

JF - Journal of the American Chemical Society

ER -