High Mobility Stemless InSb Nanowires

Ghada Badawy, Sasa Gazibegovic, Francesco Borsoi, Sebastian Heedt, Sebastian Koelling, Marcel A. Verheijen, Leo P. Kouwenhoven, E. P.A.M. Bakkers*

*Corresponding author for this work

Research output: Contribution to journalArticleScientificpeer-review

31 Citations (Scopus)


High aspect-ratio InSb nanowires (NWs) of high chemical purity are sought for implementing advanced quantum devices. The growth of InSb NWs is challenging, generally requiring a stem of a foreign material for nucleation. Such a stem tends to limit the length of InSb NWs and its material becomes incorporated in the InSb segment. Here, we report on the growth of chemically pure InSb NWs tens of microns long. Using a selective-area mask in combination with gold as a catalyst allows complete omission of the stem, thus demonstrating that InSb NWs can grow directly from the substrate. The introduction of the selective-area mask gives rise to novel growth kinetics, demonstrating high growth rates and complete suppression of layer deposition on the mask for Sb-rich conditions. The crystal quality and chemical purity of these NWs is reflected in the significant enhancement of low-temperature electron mobility, yielding an average of 4.4 × 104 cm2/(V s), compared to previously studied InSb NWs grown on stems.

Original languageEnglish
Pages (from-to)3575-3582
JournalNano Letters
Issue number6
Publication statusPublished - 2019


  • electron mobility
  • growth mechanisms
  • InSb
  • metal organic vapor phase epitaxy
  • Nanowires
  • stemless nanowires


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