High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications

N Golshani; J Derakhshandeh Kheljani; CIM Beenakker; R Ishihara

doi:10.1016/j.sse.2014.11.022

High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications

N Golshani, J Derakhshandeh Kheljani, CIM Beenakker, R Ishihara

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

6 Citations (SciVal)

Original language	English
Pages (from-to)	6-11
Number of pages	6
Journal	Solid-State Electronics
Volume	105
DOIs	https://doi.org/10.1016/j.sse.2014.11.022
Publication status	Published - 2015

Bibliographical note

Harvest
Available online 26-12-2014

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10.1016/j.sse.2014.11.022

Corrigendum to: "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications"
Golshani, N., Derakhshandeh Kheljani, J., Beenakker, C. I. M. & Ishihara, R., 2016, In: Solid-State Electronics. 119, p. 50-50 1 p.
Research output: Contribution to journal › Comment/Letter to the editor › Scientific

Cite this

@article{1ca649b6598446cca98fa9a237e7430e,

title = "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications",

author = "N Golshani and {Derakhshandeh Kheljani}, J and CIM Beenakker and R Ishihara",

note = "Harvest Available online 26-12-2014",

year = "2015",

doi = "10.1016/j.sse.2014.11.022",

language = "English",

volume = "105",

pages = "6--11",

journal = "Solid-State Electronics",

issn = "0038-1101",

publisher = "Elsevier",

}

TY - JOUR

T1 - High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications

AU - Golshani, N

AU - Derakhshandeh Kheljani, J

AU - Beenakker, CIM

AU - Ishihara, R

N1 - Harvest Available online 26-12-2014

PY - 2015

Y1 - 2015

U2 - 10.1016/j.sse.2014.11.022

DO - 10.1016/j.sse.2014.11.022

M3 - Article

SN - 0038-1101

VL - 105

SP - 6

EP - 11

JO - Solid-State Electronics

JF - Solid-State Electronics

ER -

High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications

Bibliographical note

Access to Document

Research output

Corrigendum to: "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications"

Cite this