High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications

N Golshani, J Derakhshandeh Kheljani, CIM Beenakker, R Ishihara

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

5 Citations (Scopus)

5 Citations
1 Comment/Letter to the editor

1 results

2016

Corrigendum to: "High-ohmic resistors fabricated by PureB layer for silicon drift detectors applications"
Golshani, N., Derakhshandeh Kheljani, J., Beenakker, C. I. M. & Ishihara, R., 2016, In: Solid-State Electronics. 119, p. 50-50 1 p.
Research output: Contribution to journal › Comment/Letter to the editor › Scientific