High performance p-channel single-crystalline Si TFT fabricated inside a location-controlled grain by ¿-Czochralski process

V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

Original language	Undefined/Unknown
Title of host publication	Proceedings of The 10th International Display Workshops (IDW'03)
Place of Publication	Fukuoka, Japan
Publisher	IDW'03
Pages	399-402
Number of pages	4
Publication status	Published - 2003
Event	The 10th International Display Workshops, Fukuoka - Fukuoka, Japan Duration: 3 Dec 2003 → 5 Dec 2003

Name
Publisher	IDW'03

Conference	The 10th International Display Workshops, Fukuoka
Period	3/12/03 → 5/12/03

Keywords

@inproceedings{52459ecae11743c28ba8496e97aab3a5,

title = "High performance p-channel single-crystalline Si TFT fabricated inside a location-controlled grain by ¿-Czochralski process",

keywords = "Conf.proc. > 3 pag",

author = "V Rana and R Ishihara and Y Hiroshima and D Abe and S Inoue and T Shimoda and JW Metselaar and CIM Beenakker",

year = "2003",

language = "Undefined/Unknown",

publisher = "IDW'03",

pages = "399--402",

booktitle = "Proceedings of The 10th International Display Workshops (IDW'03)",

note = "The 10th International Display Workshops, Fukuoka ; Conference date: 03-12-2003 Through 05-12-2003",

}

Rana, V, Ishihara, R, Hiroshima, Y, Abe, D, Inoue, S, Shimoda, T, Metselaar, JW & Beenakker, CIM 2003, High performance p-channel single-crystalline Si TFT fabricated inside a location-controlled grain by ¿-Czochralski process. in Proceedings of The 10th International Display Workshops (IDW'03). IDW'03, Fukuoka, Japan, pp. 399-402, The 10th International Display Workshops, Fukuoka, 3/12/03.

High performance p-channel single-crystalline Si TFT fabricated inside a location-controlled grain by ¿-Czochralski process. / Rana, V; Ishihara, R; Hiroshima, Y et al.
Proceedings of The 10th International Display Workshops (IDW'03). Fukuoka, Japan: IDW'03, 2003. p. 399-402.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

TY - GEN

T1 - High performance p-channel single-crystalline Si TFT fabricated inside a location-controlled grain by ¿-Czochralski process

AU - Rana, V

AU - Ishihara, R

AU - Hiroshima, Y

AU - Abe, D

AU - Inoue, S

AU - Shimoda, T

AU - Metselaar, JW

AU - Beenakker, CIM

PY - 2003

Y1 - 2003

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 399

EP - 402

BT - Proceedings of The 10th International Display Workshops (IDW'03)

PB - IDW'03

CY - Fukuoka, Japan

T2 - The 10th International Display Workshops, Fukuoka

Y2 - 3 December 2003 through 5 December 2003

ER -