High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by ¿-czochralski process

V Rana; R Ishihara; Y Hiroshima; D Abe; S Inoue; T Shimoda; JW Metselaar; CIM Beenakker

High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by ¿-czochralski process

V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

Original language	Undefined/Unknown
Title of host publication	SAFE 2003; Proceedings of sixth annual workshop on semiconductors advances for future electronics
Editors	s.n.
Place of Publication	Utrecht
Publisher	STW
Pages	639-642
Number of pages	4
ISBN (Print)	90-73461-39-1
Publication status	Published - 2003
Event	Sixth annual workshop on semiconductors advances for future electronics, Veldhoven, The Netherlands - Utrecht Duration: 25 Nov 2003 → 26 Nov 2003

Publication series

Name
Publisher	STW

Conference

Conference	Sixth annual workshop on semiconductors advances for future electronics, Veldhoven, The Netherlands
Period	25/11/03 → 26/11/03

Keywords

Conf.proc. > 3 pag

Cite this

Rana, V., Ishihara, R., Hiroshima, Y., Abe, D., Inoue, S., Shimoda, T., Metselaar, JW., & Beenakker, CIM. (2003). High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by ¿-czochralski process. In s.n. (Ed.), SAFE 2003; Proceedings of sixth annual workshop on semiconductors advances for future electronics (pp. 639-642). STW.

@inproceedings{d96035ee9a8b44498473a058faada321,

title = "High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by ¿-czochralski process",

keywords = "Conf.proc. > 3 pag",

author = "V Rana and R Ishihara and Y Hiroshima and D Abe and S Inoue and T Shimoda and JW Metselaar and CIM Beenakker",

year = "2003",

language = "Undefined/Unknown",

isbn = "90-73461-39-1",

publisher = "STW",

pages = "639--642",

editor = "s.n.",

booktitle = "SAFE 2003; Proceedings of sixth annual workshop on semiconductors advances for future electronics",

note = "Sixth annual workshop on semiconductors advances for future electronics, Veldhoven, The Netherlands ; Conference date: 25-11-2003 Through 26-11-2003",

}

Rana, V, Ishihara, R, Hiroshima, Y, Abe, D, Inoue, S, Shimoda, T, Metselaar, JW & Beenakker, CIM 2003, High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by ¿-czochralski process. in s.n. (ed.), SAFE 2003; Proceedings of sixth annual workshop on semiconductors advances for future electronics. STW, Utrecht, pp. 639-642, Sixth annual workshop on semiconductors advances for future electronics, Veldhoven, The Netherlands, 25/11/03.

High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by ¿-czochralski process. / Rana, V; Ishihara, R; Hiroshima, Y et al.
SAFE 2003; Proceedings of sixth annual workshop on semiconductors advances for future electronics. ed. / s.n. Utrecht: STW, 2003. p. 639-642.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific

TY - GEN

T1 - High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlled grain by ¿-czochralski process

AU - Rana, V

AU - Ishihara, R

AU - Hiroshima, Y

AU - Abe, D

AU - Inoue, S

AU - Shimoda, T

AU - Metselaar, JW

AU - Beenakker, CIM

PY - 2003

Y1 - 2003

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SN - 90-73461-39-1

SP - 639

EP - 642

BT - SAFE 2003; Proceedings of sixth annual workshop on semiconductors advances for future electronics

A2 - s.n., null

PB - STW

CY - Utrecht

T2 - Sixth annual workshop on semiconductors advances for future electronics, Veldhoven, The Netherlands

Y2 - 25 November 2003 through 26 November 2003

ER -