High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlledfrain by .-Czochralski process

V Rana, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	1943-1947
Number of pages	5
Journal	IEICE Transactions on Electronics
Volume	87
Issue number	11
Publication status	Published - 2004

ed. is niet bekend

Keywords

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title = "High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlledfrain by .-Czochralski process",

keywords = "ZX CWTS JFIS < 1.00",

author = "V Rana and R Ishihara and Y Hiroshima and D Abe and S Inoue and T Shimoda and JW Metselaar and CIM Beenakker",

note = "ed. is niet bekend",

year = "2004",

language = "Undefined/Unknown",

volume = "87",

pages = "1943--1947",

journal = "IEICE Transactions on Electronics",

issn = "0916-8524",

publisher = "Maruzen Co., Ltd/Maruzen Kabushikikaisha",

number = "11",

}

TY - JOUR

T1 - High performance P-channel single-crystalline Si TFTs fabricated inside a location-controlledfrain by .-Czochralski process

AU - Rana, V

AU - Ishihara, R

AU - Hiroshima, Y

AU - Abe, D

AU - Inoue, S

AU - Shimoda, T

AU - Metselaar, JW

AU - Beenakker, CIM

N1 - ed. is niet bekend

PY - 2004

Y1 - 2004

KW - ZX CWTS JFIS < 1.00

M3 - Article

SN - 0916-8524

VL - 87

SP - 1943

EP - 1947

JO - IEICE Transactions on Electronics

JF - IEICE Transactions on Electronics

IS - 11

ER -