High performance single grain SI TFTs inside a location-controlled grain by µ-Czochralski process with capping-layer

R Vikas; R Ishihara; Y Hiroshima; D Abe; S Inoue; T Shimoda; JW Metselaar; CIM Beenakker

High performance single grain SI TFTs inside a location-controlled grain by µ-Czochralski process with capping-layer

R Vikas, R Ishihara, Y Hiroshima, D Abe, S Inoue, T Shimoda, JW Metselaar, CIM Beenakker

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	Proceedings of the 2005 International Electron Devices Meeting IEDM
Editors	s.n.
Place of Publication	Piscataway
Publisher	IEEE
Pages	1-4
Number of pages	4
Publication status	Published - 2005
Event	2005 International Electron Devices Meeting IEDM, Washington, DC, USA - Piscataway Duration: 5 Dec 2005 → 7 Dec 2005

Publication series

Name
Publisher	IEEE

Conference

Conference	2005 International Electron Devices Meeting IEDM, Washington, DC, USA
Period	5/12/05 → 7/12/05

Bibliographical note

Editor onbekend JH

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

@inproceedings{1864fa650f934187982b93fc6dd6c0b3,

title = "High performance single grain SI TFTs inside a location-controlled grain by µ-Czochralski process with capping-layer",

keywords = "conference contrib. refereed, Conf.proc. > 3 pag",

author = "R Vikas and R Ishihara and Y Hiroshima and D Abe and S Inoue and T Shimoda and JW Metselaar and CIM Beenakker",

note = "Editor onbekend JH; 2005 International Electron Devices Meeting IEDM, Washington, DC, USA ; Conference date: 05-12-2005 Through 07-12-2005",

year = "2005",

language = "Undefined/Unknown",

publisher = "IEEE",

pages = "1--4",

editor = "s.n.",

booktitle = "Proceedings of the 2005 International Electron Devices Meeting IEDM",

address = "United States",

}

Vikas, R, Ishihara, R, Hiroshima, Y, Abe, D, Inoue, S, Shimoda, T, Metselaar, JW & Beenakker, CIM 2005, High performance single grain SI TFTs inside a location-controlled grain by µ-Czochralski process with capping-layer. in s.n. (ed.), Proceedings of the 2005 International Electron Devices Meeting IEDM. IEEE, Piscataway, pp. 1-4, 2005 International Electron Devices Meeting IEDM, Washington, DC, USA, 5/12/05.

High performance single grain SI TFTs inside a location-controlled grain by µ-Czochralski process with capping-layer. / Vikas, R; Ishihara, R; Hiroshima, Y et al.
Proceedings of the 2005 International Electron Devices Meeting IEDM. ed. / s.n. Piscataway: IEEE, 2005. p. 1-4.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - High performance single grain SI TFTs inside a location-controlled grain by µ-Czochralski process with capping-layer

AU - Vikas, R

AU - Ishihara, R

AU - Hiroshima, Y

AU - Abe, D

AU - Inoue, S

AU - Shimoda, T

AU - Metselaar, JW

AU - Beenakker, CIM

N1 - Editor onbekend JH

PY - 2005

Y1 - 2005

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 1

EP - 4

BT - Proceedings of the 2005 International Electron Devices Meeting IEDM

A2 - s.n., null

PB - IEEE

CY - Piscataway

T2 - 2005 International Electron Devices Meeting IEDM, Washington, DC, USA

Y2 - 5 December 2005 through 7 December 2005

ER -