Abstract
We report a high-performance GaN Schottky barrier diode (SBD) on a sapphire substrate with a novel post-mesa nitridation technique and its application in a high-power microwave detection circuit. The fabricated SBD achieved a very high forward current density of 9.19 kA cm-2 at 3 V, a low specific on-resistance (RON,sp) of 0.22 mO cm2 and breakdown voltage of 106 V. An extremely high output current of 400 mA was obtained when the detected power reached 38.4 dBm@3 GHz in pulsed-wave mode with a small anode diameter of 70 μm. Meanwhile, broadband detection at frequencies ranging from 1 to 6 GHz was achieved at 33 dBm in continuous-wave mode.
Original language | English |
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Article number | 03LT01 |
Number of pages | 7 |
Journal | Semiconductor Science and Technology |
Volume | 36 |
Issue number | 3 |
DOIs | |
Publication status | Published - 2021 |
Keywords
- GaN
- Microwave power detector
- Quasi
- Schottky barrier diode (SBD)
- Vertical