High-Q Saddle-Add-On Metallization (SAM) inductors on HRS substrates

H Sagkol; B Rejaei Salmassi; JN Burghartz

High-Q Saddle-Add-On Metallization (SAM) inductors on HRS substrates

H Sagkol, B Rejaei Salmassi, JN Burghartz

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

2 Citations (Scopus)

Abstract

An optimized Saddle-add-on metallization process is used on surface passivated high resistivity silicon substrate to implement very high quality (Q) factor inductors. Test inductors with 5 and 10 nH inductance values are realized and measured to have maximum Q values of 37 at 1.5 GHz and 32 at 900 MHz respectively. Keywords: Passive devices, Micromachining, RFIC, Inductors.

Original language	Undefined/Unknown
Title of host publication	2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of papers
Editors	Rhonda Franklin Drayton
Place of Publication	Piscataway
Publisher	IEEE Society
Pages	245-247
Number of pages	3
ISBN (Print)	0-7803-9742-0
Publication status	Published - 2006
Event	2006 Topical meeting on silicon monolithic integrated circuits in RF systems, San Diego, CA, USA - Piscataway Duration: 18 Jan 2006 → 20 Jan 2006

Publication series

Name
Publisher	IEEE

Conference

Conference	2006 Topical meeting on silicon monolithic integrated circuits in RF systems, San Diego, CA, USA
Period	18/01/06 → 20/01/06

Keywords

Elektrotechniek
Geen BTA classificatie

Cite this

@inproceedings{08ec2e78449d410085c6fab29ce21e91,

title = "High-Q Saddle-Add-On Metallization (SAM) inductors on HRS substrates",

abstract = "An optimized Saddle-add-on metallization process is used on surface passivated high resistivity silicon substrate to implement very high quality (Q) factor inductors. Test inductors with 5 and 10 nH inductance values are realized and measured to have maximum Q values of 37 at 1.5 GHz and 32 at 900 MHz respectively. Keywords: Passive devices, Micromachining, RFIC, Inductors.",

keywords = "Elektrotechniek, Geen BTA classificatie",

author = "H Sagkol and {Rejaei Salmassi}, B and JN Burghartz",

year = "2006",

language = "Undefined/Unknown",

isbn = "0-7803-9742-0",

publisher = "IEEE Society",

pages = "245--247",

editor = "{Rhonda Franklin Drayton}",

booktitle = "2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of papers",

note = "2006 Topical meeting on silicon monolithic integrated circuits in RF systems, San Diego, CA, USA ; Conference date: 18-01-2006 Through 20-01-2006",

}

Sagkol, H, Rejaei Salmassi, B & Burghartz, JN 2006, High-Q Saddle-Add-On Metallization (SAM) inductors on HRS substrates. in Rhonda Franklin Drayton (ed.), 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of papers. IEEE Society, Piscataway, pp. 245-247, 2006 Topical meeting on silicon monolithic integrated circuits in RF systems, San Diego, CA, USA, 18/01/06.

High-Q Saddle-Add-On Metallization (SAM) inductors on HRS substrates. / Sagkol, H; Rejaei Salmassi, B; Burghartz, JN.
2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of papers. ed. / Rhonda Franklin Drayton. Piscataway: IEEE Society, 2006. p. 245-247.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - High-Q Saddle-Add-On Metallization (SAM) inductors on HRS substrates

AU - Sagkol, H

AU - Rejaei Salmassi, B

AU - Burghartz, JN

PY - 2006

Y1 - 2006

N2 - An optimized Saddle-add-on metallization process is used on surface passivated high resistivity silicon substrate to implement very high quality (Q) factor inductors. Test inductors with 5 and 10 nH inductance values are realized and measured to have maximum Q values of 37 at 1.5 GHz and 32 at 900 MHz respectively. Keywords: Passive devices, Micromachining, RFIC, Inductors.

AB - An optimized Saddle-add-on metallization process is used on surface passivated high resistivity silicon substrate to implement very high quality (Q) factor inductors. Test inductors with 5 and 10 nH inductance values are realized and measured to have maximum Q values of 37 at 1.5 GHz and 32 at 900 MHz respectively. Keywords: Passive devices, Micromachining, RFIC, Inductors.

KW - Elektrotechniek

KW - Geen BTA classificatie

UR - http://ieeexplore.ieee.org/iel5/10587/33464/01587958.pdf

M3 - Conference contribution

SN - 0-7803-9742-0

SP - 245

EP - 247

BT - 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - Digest of papers

A2 - Rhonda Franklin Drayton, null

PB - IEEE Society

CY - Piscataway

T2 - 2006 Topical meeting on silicon monolithic integrated circuits in RF systems, San Diego, CA, USA

Y2 - 18 January 2006 through 20 January 2006

ER -

High-Q Saddle-Add-On Metallization (SAM) inductors on HRS substrates

Abstract

Publication series

Conference

Keywords

Other files and links

Cite this