High-quality p+n Ge diodes selectively grown on Si with a sub-300nm transition region

A Sammak, WB De Boer, L Qi, LK Nanver

Research output: Chapter in Book/Conference proceedings/Edited volumeConference contributionScientificpeer-review

1 Citation (Scopus)
Original languageEnglish
Title of host publication2011 IEEE European Solid-State Device Research Conference (ESSCIRC -ESSDERC 2011)
EditorsH Tenhunen, M Aberg
PublisherIEEE Society
Pages359-362
Number of pages4
ISBN (Print)978-1-4577-0707-0
DOIs
Publication statusPublished - 2011
EventESSCIRC 2011: 37th European Solid-State Circuits Conference - Finlandia Hall, Helsinki, Finland
Duration: 12 Sep 201116 Sep 2011
Conference number: 37

Publication series

Name
PublisherIEEE

Conference

ConferenceESSCIRC 2011
Abbreviated titleESSCIRC
CountryFinland
CityHelsinki
Period12/09/1116/09/11

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