High quality SiO2 deposited under 100oC by inductively coupled plasma (ICP) enhanced CVD

T Chen; R Ishihara; CIM Beenakker

High quality SiO2 deposited under 100oC by inductively coupled plasma (ICP) enhanced CVD

Electronic Components, Technology and Materials

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials
Editors	H Hamada
Place of Publication	Tokio, Japan.
Publisher	Japan Society of Applied Physics
Pages	49-52
Number of pages	4
Publication status	Published - 2008
Event	Fifteenth international workshop on active-matrix flatpanel displays and devices, TFT technologies and FPD materials, Tokio, Japan - Tokio, Japan. Duration: 2 Jul 2008 → 4 Jul 2008

Publication series

Name
Publisher	The Japan Society of Applied Physics

Conference

Conference	Fifteenth international workshop on active-matrix flatpanel displays and devices, TFT technologies and FPD materials, Tokio, Japan
Period	2/07/08 → 4/07/08

Keywords

conference contrib. refereed
Conf.proc. > 3 pag

Cite this

Chen, T ; Ishihara, R ; Beenakker, CIM. / High quality SiO2 deposited under 100oC by inductively coupled plasma (ICP) enhanced CVD. Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials. editor / H Hamada. Tokio, Japan. : Japan Society of Applied Physics, 2008. pp. 49-52

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author = "T Chen and R Ishihara and CIM Beenakker",

year = "2008",

language = "Undefined/Unknown",

publisher = "Japan Society of Applied Physics",

pages = "49--52",

editor = "H Hamada",

booktitle = "Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials",

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note = "Fifteenth international workshop on active-matrix flatpanel displays and devices, TFT technologies and FPD materials, Tokio, Japan ; Conference date: 02-07-2008 Through 04-07-2008",

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Chen, T, Ishihara, R & Beenakker, CIM 2008, High quality SiO2 deposited under 100oC by inductively coupled plasma (ICP) enhanced CVD. in H Hamada (ed.), Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials. Japan Society of Applied Physics, Tokio, Japan., pp. 49-52, Fifteenth international workshop on active-matrix flatpanel displays and devices, TFT technologies and FPD materials, Tokio, Japan, 2/07/08.

High quality SiO2 deposited under 100oC by inductively coupled plasma (ICP) enhanced CVD. / Chen, T; Ishihara, R ; Beenakker, CIM.
Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials. ed. / H Hamada. Tokio, Japan.: Japan Society of Applied Physics, 2008. p. 49-52.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

TY - GEN

T1 - High quality SiO2 deposited under 100oC by inductively coupled plasma (ICP) enhanced CVD

AU - Chen, T

AU - Ishihara, R

AU - Beenakker, CIM

PY - 2008

Y1 - 2008

KW - conference contrib. refereed

KW - Conf.proc. > 3 pag

M3 - Conference contribution

SP - 49

EP - 52

BT - Digest of technical papers of the fifteenth international workshop on active-matrix flatpanel displays and devices -TFT technologies and FPD materials

A2 - Hamada, H

PB - Japan Society of Applied Physics

CY - Tokio, Japan.

T2 - Fifteenth international workshop on active-matrix flatpanel displays and devices, TFT technologies and FPD materials, Tokio, Japan

Y2 - 2 July 2008 through 4 July 2008

ER -