High speed six transistor static random access memory cells using single grain thin film transistors fabricated at low temprature process

N Golshani; J Derakhshandeh Kheljani; R Ishihara; CIM Beenakker

doi:10.1143/JJAP.49.03CA09

High speed six transistor static random access memory cells using single grain thin film transistors fabricated at low temprature process

N Golshani, J Derakhshandeh Kheljani, R Ishihara, CIM Beenakker

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

1 Citation (Scopus)

Original language	English
Pages (from-to)	1-6
Number of pages	6
Journal	Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres
Volume	49
Issue number	3
DOIs	https://doi.org/10.1143/JJAP.49.03CA09
Publication status	Published - 2010

Bibliographical note

http://adsabs.harvard.edu/abs/2010JaJAP..49cCA09N

Keywords

CWTS JFIS < 0.75

Access to Document

10.1143/JJAP.49.03CA09

Cite this

@article{da25cfd79e384dec9cf8e093495e7d1c,

title = "High speed six transistor static random access memory cells using single grain thin film transistors fabricated at low temprature process",

keywords = "CWTS JFIS < 0.75",

author = "N Golshani and {Derakhshandeh Kheljani}, J and R Ishihara and CIM Beenakker",

note = "http://adsabs.harvard.edu/abs/2010JaJAP..49cCA09N",

year = "2010",

doi = "10.1143/JJAP.49.03CA09",

language = "English",

volume = "49",

pages = "1--6",

journal = "Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "3",

}

High speed six transistor static random access memory cells using single grain thin film transistors fabricated at low temprature process. / Golshani, N; Derakhshandeh Kheljani, J; Ishihara, R et al.
In: Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres, Vol. 49, No. 3, 2010, p. 1-6.

Research output: Contribution to journal › Article › Scientific › peer-review

TY - JOUR

T1 - High speed six transistor static random access memory cells using single grain thin film transistors fabricated at low temprature process

AU - Golshani, N

AU - Derakhshandeh Kheljani, J

AU - Ishihara, R

AU - Beenakker, CIM

N1 - http://adsabs.harvard.edu/abs/2010JaJAP..49cCA09N

PY - 2010

Y1 - 2010

KW - CWTS JFIS < 0.75

U2 - 10.1143/JJAP.49.03CA09

DO - 10.1143/JJAP.49.03CA09

M3 - Article

SN - 0021-4922

VL - 49

SP - 1

EP - 6

JO - Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres

JF - Japanese Journal of Applied Physics. Part 2, Letters & Express Lettres

IS - 3

ER -