High-temperature electronic devices enabled by hBN-encapsulated graphene

Makars Šiškins, Ciaran Mullan, Seok Kyun Son, Jun Yin, Kenji Watanabe, Takashi Taniguchi, Davit Ghazaryan, Kostya S. Novoselov, Artem Mishchenko

Research output: Contribution to journalArticleScientificpeer-review

9 Citations (Scopus)


Numerous applications call for electronics capable of operation at high temperatures where conventional Si-based electrical devices fail. In this work, we show that graphene-based devices are capable of performing in an extended temperature range up to 500 °C without noticeable thermally induced degradation when encapsulated by hexagonal boron nitride (hBN). The performance of these devices near the neutrality point is dominated by thermal excitations at elevated temperatures. Non-linearity pronounced in electric field-mediated resistance of the aligned graphene/hBN allowed us to realize heterodyne signal mixing at temperatures comparable to that of the Venus atmosphere (∼460 °C).

Original languageEnglish
Article number123104
Pages (from-to)6
JournalApplied Physics Letters
Issue number12
Publication statusPublished - 2019

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