High-Voltage and High-Current IGBT Press-pack Module for Power Grid

Chunjian Tan; Shaogang Wang; X. Liu; Jing Jiang; Guoqi  Zhang; Huaiyu Ye

doi:10.1109/EuroSimE54907.2022.9758878

High-Voltage and High-Current IGBT Press-pack Module for Power Grid

Chunjian Tan, Shaogang Wang, X. Liu, Jing Jiang, Guoqi Zhang, Huaiyu Ye^*

^*Corresponding author for this work

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Abstract

On the basis of the development and application requirements of flexible DC transmission techniques, a 1 kA/10 kV half-bridge IGBT press-pack module is studied. The module is composed of three subunits in series, and each subunit consists of IGBT chips in parallel. In order to solve the problem of chips failure caused by non-uniform rigid-contacting pressure in the press-pack modules, the elastic-contacting structure is designed to ensure excellent electrical connection between chips and contact terminal. During the operating conditions, the heat generated by IGBT chips can induce the increasing of internal temperature of the module, affecting the reliability of the module. A cooling structure is introduced between the subunits to solve the heat dissipation problem of the module. In addition, the thermal analysis of subunit and the cooling structure is performed by using the finite element simulation, and the chip layout and water-cooling scheme are optimized. The testing of electrical parameters of the IGBT module is also conducted.

Original language	English
Title of host publication	Proceedings of the 2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)
Publisher	IEEE
Pages	1-4
Number of pages	4
ISBN (Electronic)	978-1-6654-5836-8
ISBN (Print)	978-1-6654-5837-5
DOIs	https://doi.org/10.1109/EuroSimE54907.2022.9758878
Publication status	Published - 2022
Event	23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2022) - St Julian, Malta Duration: 25 Apr 2022 → 27 Apr 2022 Conference number: 23rd

Conference

Conference	23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2022)
Country/Territory	Malta
City	St Julian
Period	25/04/22 → 27/04/22

Bibliographical note

Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care
Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

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10.1109/EuroSimE54907.2022.9758878

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Tan, C., Wang, S., Liu, X., Jiang, J., Zhang, G., & Ye, H. (2022). High-Voltage and High-Current IGBT Press-pack Module for Power Grid. In Proceedings of the 2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE) (pp. 1-4). [9758878] IEEE . https://doi.org/10.1109/EuroSimE54907.2022.9758878

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title = "High-Voltage and High-Current IGBT Press-pack Module for Power Grid",

abstract = "On the basis of the development and application requirements of flexible DC transmission techniques, a 1 kA/10 kV half-bridge IGBT press-pack module is studied. The module is composed of three subunits in series, and each subunit consists of IGBT chips in parallel. In order to solve the problem of chips failure caused by non-uniform rigid-contacting pressure in the press-pack modules, the elastic-contacting structure is designed to ensure excellent electrical connection between chips and contact terminal. During the operating conditions, the heat generated by IGBT chips can induce the increasing of internal temperature of the module, affecting the reliability of the module. A cooling structure is introduced between the subunits to solve the heat dissipation problem of the module. In addition, the thermal analysis of subunit and the cooling structure is performed by using the finite element simulation, and the chip layout and water-cooling scheme are optimized. The testing of electrical parameters of the IGBT module is also conducted.",

author = "Chunjian Tan and Shaogang Wang and X. Liu and Jing Jiang and Guoqi Zhang and Huaiyu Ye",

note = "Green Open Access added to TU Delft Institutional Repository 'You share, we take care!' - Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2022) ; Conference date: 25-04-2022 Through 27-04-2022",

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Tan, C , Wang, S , Liu, X, Jiang, J, Zhang, G & Ye, H 2022, High-Voltage and High-Current IGBT Press-pack Module for Power Grid. in Proceedings of the 2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE)., 9758878, IEEE , pp. 1-4, 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE 2022), St Julian, Malta, 25/04/22. https://doi.org/10.1109/EuroSimE54907.2022.9758878

High-Voltage and High-Current IGBT Press-pack Module for Power Grid. / Tan, Chunjian ; Wang, Shaogang ; Liu, X.; Jiang, Jing; Zhang, Guoqi ; Ye, Huaiyu.

Proceedings of the 2022 23rd International Conference on Thermal, Mechanical and Multi-Physics Simulation and Experiments in Microelectronics and Microsystems (EuroSimE). IEEE , 2022. p. 1-4 9758878.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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T1 - High-Voltage and High-Current IGBT Press-pack Module for Power Grid

AU - Tan, Chunjian

AU - Wang, Shaogang

AU - Liu, X.

AU - Jiang, Jing

AU - Zhang, Guoqi

AU - Ye, Huaiyu

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PY - 2022

Y1 - 2022

N2 - On the basis of the development and application requirements of flexible DC transmission techniques, a 1 kA/10 kV half-bridge IGBT press-pack module is studied. The module is composed of three subunits in series, and each subunit consists of IGBT chips in parallel. In order to solve the problem of chips failure caused by non-uniform rigid-contacting pressure in the press-pack modules, the elastic-contacting structure is designed to ensure excellent electrical connection between chips and contact terminal. During the operating conditions, the heat generated by IGBT chips can induce the increasing of internal temperature of the module, affecting the reliability of the module. A cooling structure is introduced between the subunits to solve the heat dissipation problem of the module. In addition, the thermal analysis of subunit and the cooling structure is performed by using the finite element simulation, and the chip layout and water-cooling scheme are optimized. The testing of electrical parameters of the IGBT module is also conducted.

AB - On the basis of the development and application requirements of flexible DC transmission techniques, a 1 kA/10 kV half-bridge IGBT press-pack module is studied. The module is composed of three subunits in series, and each subunit consists of IGBT chips in parallel. In order to solve the problem of chips failure caused by non-uniform rigid-contacting pressure in the press-pack modules, the elastic-contacting structure is designed to ensure excellent electrical connection between chips and contact terminal. During the operating conditions, the heat generated by IGBT chips can induce the increasing of internal temperature of the module, affecting the reliability of the module. A cooling structure is introduced between the subunits to solve the heat dissipation problem of the module. In addition, the thermal analysis of subunit and the cooling structure is performed by using the finite element simulation, and the chip layout and water-cooling scheme are optimized. The testing of electrical parameters of the IGBT module is also conducted.

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Y2 - 25 April 2022 through 27 April 2022

ER -

High-Voltage and High-Current IGBT Press-pack Module for Power Grid

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