High Volume Electrical Characterization of Semiconductor Qubits

R. Pillarisetty; H.C. George; Tom Watson; L. Lampert; Tobias Krähenmann; A. M. Zwerver; M. Veldhorst; G. Scappucci; L. M.K. Vandersypen; null More Authors

doi:10.1109/IEDM19573.2019.8993587

High Volume Electrical Characterization of Semiconductor Qubits

R. Pillarisetty, H.C. George, Tom Watson, L. Lampert, Tobias Krähenmann, A. M. Zwerver, M. Veldhorst, G. Scappucci, L. M.K. Vandersypen, More Authors

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

19 Citations (Scopus)

76 Downloads (Pure)

Abstract

Perhaps the greatest challenge facing quantum computing hardware development is the lack of a high throughput electrical characterization infrastructure at the cryogenic temperatures required for qubit measurements. In this article, we discuss our efforts to develop such a line to guide 300mm spin qubit process development. This includes (i) working with our supply chain to create the required cryogenic high volume testing ecosystem, (ii) driving full wafer cryogenic testing for both transistor and quantum dot statistics, and (iii) utilizing this line to develop a quantum dot process resulting in key electrical data comparable to that from leading devices in literature, but with unprecedented yield and reproducibility.

Original language	English
Title of host publication	2019 IEEE International Electron Devices Meeting, IEDM 2019
Publisher	Institute of Electrical and Electronics Engineers (IEEE)
Number of pages	4
Volume	2019-December
ISBN (Electronic)	9781728140315
DOIs	https://doi.org/10.1109/IEDM19573.2019.8993587
Publication status	Published - 2019
Event	65th Annual IEEE International Electron Devices Meeting, IEDM 2019 - San Francisco, United States Duration: 7 Dec 2019 → 11 Dec 2019

Conference

Conference	65th Annual IEEE International Electron Devices Meeting, IEDM 2019
Country/Territory	United States
City	San Francisco
Period	7/12/19 → 11/12/19

Bibliographical note

Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.

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Pillarisetty, R., George, H. C., Watson, T., Lampert, L., Krähenmann, T., Zwerver, A. M., Veldhorst, M., Scappucci, G., Vandersypen, L. M. K., & More Authors (2019). High Volume Electrical Characterization of Semiconductor Qubits. In 2019 IEEE International Electron Devices Meeting, IEDM 2019 (Vol. 2019-December). Article 8993587 Institute of Electrical and Electronics Engineers (IEEE). https://doi.org/10.1109/IEDM19573.2019.8993587

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title = "High Volume Electrical Characterization of Semiconductor Qubits",

abstract = "Perhaps the greatest challenge facing quantum computing hardware development is the lack of a high throughput electrical characterization infrastructure at the cryogenic temperatures required for qubit measurements. In this article, we discuss our efforts to develop such a line to guide 300mm spin qubit process development. This includes (i) working with our supply chain to create the required cryogenic high volume testing ecosystem, (ii) driving full wafer cryogenic testing for both transistor and quantum dot statistics, and (iii) utilizing this line to develop a quantum dot process resulting in key electrical data comparable to that from leading devices in literature, but with unprecedented yield and reproducibility.",

author = "R. Pillarisetty and H.C. George and Tom Watson and L. Lampert and Tobias Kr{\"a}henmann and Zwerver, {A. M.} and M. Veldhorst and G. Scappucci and Vandersypen, {L. M.K.} and {More Authors}",

note = "Green Open Access added to TU Delft Institutional Repository {\textquoteleft}You share, we take care!{\textquoteright} – Taverne project https://www.openaccess.nl/en/you-share-we-take-care Otherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.; 65th Annual IEEE International Electron Devices Meeting, IEDM 2019 ; Conference date: 07-12-2019 Through 11-12-2019",

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doi = "10.1109/IEDM19573.2019.8993587",

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Pillarisetty, R, George, HC, Watson, T, Lampert, L, Krähenmann, T, Zwerver, AM , Veldhorst, M , Scappucci, G , Vandersypen, LMK & More Authors 2019, High Volume Electrical Characterization of Semiconductor Qubits. in 2019 IEEE International Electron Devices Meeting, IEDM 2019. vol. 2019-December, 8993587, Institute of Electrical and Electronics Engineers (IEEE), 65th Annual IEEE International Electron Devices Meeting, IEDM 2019, San Francisco, United States, 7/12/19. https://doi.org/10.1109/IEDM19573.2019.8993587

High Volume Electrical Characterization of Semiconductor Qubits. / Pillarisetty, R.; George, H.C.; Watson, Tom et al.
2019 IEEE International Electron Devices Meeting, IEDM 2019. Vol. 2019-December Institute of Electrical and Electronics Engineers (IEEE), 2019. 8993587.

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

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AB - Perhaps the greatest challenge facing quantum computing hardware development is the lack of a high throughput electrical characterization infrastructure at the cryogenic temperatures required for qubit measurements. In this article, we discuss our efforts to develop such a line to guide 300mm spin qubit process development. This includes (i) working with our supply chain to create the required cryogenic high volume testing ecosystem, (ii) driving full wafer cryogenic testing for both transistor and quantum dot statistics, and (iii) utilizing this line to develop a quantum dot process resulting in key electrical data comparable to that from leading devices in literature, but with unprecedented yield and reproducibility.

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High Volume Electrical Characterization of Semiconductor Qubits

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