Highly-conformal sputtered through-silicon vias with sharp superconducting transition

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Abstract

This paper describes the microfabrication and electrical characterization of aluminum-coated superconducting through-silicon vias (TSVs) with sharp superconducting transition above 1 K. The sharp superconducting transition was achieved by means of fully conformal and void-free DC-sputtering of the TSVs with Al, and is here demonstrated in up to 500 μm-deep vias. Full conformality of Al sputtering was made possible by shaping the vias with a tailored hourglass profile, which allowed a metallic layer as thick as 430 nm to be deposited in the center of the vias. Single-via electric resistance as low as 160 mΩ at room temperature and superconductivity at 1.27 K were measured by a three-dimensional (3D) cross-bridge Kelvin resistor structure. This work establishes a CMOS-compatible fabrication process suitable for arrays of superconducting TSVs and 3D integration of superconducting silicon-based devices. [2020-0354]

Original languageEnglish
Number of pages9
JournalIEEE Journal of Microelectromechanical Systems
DOIs
Publication statusPublished - 2021

Keywords

  • Aluminum
  • Fabrication
  • Silicon
  • Sputtering
  • Superconducting epitaxial layers
  • Superconducting integrated circuits
  • Temperature measurement
  • Through-silicon vias
  • cryogenic
  • interconnects
  • sputtering
  • superconducting
  • through-silicon vias

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