Abstract
This paper describes the microfabrication and electrical characterization of aluminum-coated superconducting through-silicon vias (TSVs) with sharp superconducting transition above 1 K. The sharp superconducting transition was achieved by means of fully conformal and void-free DC-sputtering of the TSVs with Al, and is here demonstrated in up to 500μ m-deep vias. Full conformality of Al sputtering was made possible by shaping the vias with a tailored hourglass profile, which allowed a metallic layer as thick as 430 nm to be deposited in the center of the vias. Single-via electric resistance as low as 160 mΩ at room temperature and superconductivity at 1.27 K were measured by a three-dimensional (3D) cross-bridge Kelvin resistor structure. This work establishes a CMOS-compatible fabrication process suitable for arrays of superconducting TSVs and 3D integration of superconducting silicon-based devices. [2020-0354].
Original language | English |
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Article number | 9345777 |
Pages (from-to) | 253-261 |
Number of pages | 9 |
Journal | IEEE Journal of Microelectromechanical Systems |
Volume | 30 |
Issue number | 2 |
DOIs | |
Publication status | Published - 2021 |
Bibliographical note
Green Open Access added to TU Delft Institutional Repository ‘You share, we take care!’ – Taverne project https://www.openaccess.nl/en/you-share-we-take-careOtherwise as indicated in the copyright section: the publisher is the copyright holder of this work and the author uses the Dutch legislation to make this work public.
Keywords
- Aluminum
- Fabrication
- Silicon
- Sputtering
- Superconducting epitaxial layers
- Superconducting integrated circuits
- Temperature measurement
- Through-silicon vias
- cryogenic
- interconnects
- sputtering
- superconducting
- through-silicon vias