TY - JOUR
T1 - Highly tuneable hole quantum dots in Ge-Si core-shell nanowires
AU - Brauns, Matthias
AU - Ridderbos, Joost
AU - Li, Ang
AU - Van Der Wiel, Wilfred G.
AU - Bakkers, Erik P.A.M.
AU - Zwanenburg, Floris A.
PY - 2016/10/3
Y1 - 2016/10/3
N2 - We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.
AB - We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.
UR - http://resolver.tudelft.nl/uuid:3177399f-eccb-4786-acca-ca3bcf7b2c1b
UR - http://www.scopus.com/inward/record.url?scp=84990841788&partnerID=8YFLogxK
U2 - 10.1063/1.4963715
DO - 10.1063/1.4963715
M3 - Article
AN - SCOPUS:84990841788
SN - 0003-6951
VL - 109
JO - Applied Physics Letters
JF - Applied Physics Letters
IS - 14
M1 - 143113
ER -