Hot carriers effect and tunneling effect of location- and orientation-controlled (100)- and (110)- oriented single grain Si TFTs without seed substrate

T Chen; R Ishihara; CIM Beenakker

doi:10.1109/TED.2010.2084089

Hot carriers effect and tunneling effect of location- and orientation-controlled (100)- and (110)- oriented single grain Si TFTs without seed substrate

T Chen, R Ishihara, CIM Beenakker

Electronic Components, Technology and Materials

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Original language	English
Pages (from-to)	216-223
Number of pages	8
Journal	IEEE Transactions on Electron Devices
Volume	58
Issue number	1
DOIs	https://doi.org/10.1109/TED.2010.2084089
Publication status	Published - 2011

Keywords

academic journal papers
CWTS 0.75 <= JFIS < 2.00

Access to Document

10.1109/TED.2010.2084089

Cite this

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title = "Hot carriers effect and tunneling effect of location- and orientation-controlled (100)- and (110)- oriented single grain Si TFTs without seed substrate",

keywords = "academic journal papers, CWTS 0.75 <= JFIS < 2.00",

author = "T Chen and R Ishihara and CIM Beenakker",

year = "2011",

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language = "English",

volume = "58",

pages = "216--223",

journal = "IEEE Transactions on Electron Devices",

issn = "0018-9383",

publisher = "IEEE",

number = "1",

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TY - JOUR

T1 - Hot carriers effect and tunneling effect of location- and orientation-controlled (100)- and (110)- oriented single grain Si TFTs without seed substrate

AU - Chen, T

AU - Ishihara, R

AU - Beenakker, CIM

PY - 2011

Y1 - 2011

KW - academic journal papers

KW - CWTS 0.75 <= JFIS < 2.00

U2 - 10.1109/TED.2010.2084089

DO - 10.1109/TED.2010.2084089

M3 - Article

SN - 0018-9383

VL - 58

SP - 216

EP - 223

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 1

ER -