HSQ/novolak bilayer resist for high aspect ratio nanoscale e-beam lithography.

FCMJM van Delft, JP Weterings, AK Suurling, J Romijn

Research output: Contribution to journal › Article › Scientific › peer-review

Original language	Undefined/Unknown
Pages (from-to)	3419-3423
Number of pages	5
Journal	Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures
Volume	18
Issue number	6
Publication status	Published - 2000

Keywords

@article{77a09d3966d14f02aaa27175693147d6,

title = "HSQ/novolak bilayer resist for high aspect ratio nanoscale e-beam lithography.",

keywords = "ZX Int.klas.verslagjaar < 2002",

author = "{van Delft}, FCMJM and JP Weterings and AK Suurling and J Romijn",

year = "2000",

language = "Undefined/Unknown",

volume = "18",

pages = "3419--3423",

journal = "Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures",

issn = "1071-1023",

publisher = "AVS Science and Technology Society",

number = "6",

}

TY - JOUR

T1 - HSQ/novolak bilayer resist for high aspect ratio nanoscale e-beam lithography.

AU - van Delft, FCMJM

AU - Weterings, JP

AU - Suurling, AK

AU - Romijn, J

PY - 2000

Y1 - 2000

KW - ZX Int.klas.verslagjaar < 2002

M3 - Article

SN - 1071-1023

VL - 18

SP - 3419

EP - 3423

JO - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

JF - Journal of Vacuum Science and Technology. Part B: Microelectronics and Nanometer Structures

IS - 6

ER -