Hybrid Si/SiC Switch Modulation with Minimum SiC MOSFET Conduction in Grid Connected Voltage Source Converters

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Abstract

In this paper a hybrid Si/SiC switch (HyS) modulation with minimum SiC MOSFET conduction (mcHyS) is experimentally characterized so to derive its conduction and switching performance. These are later used to derive a silicon area analytical model for the HyS configuration. The chip area model is used to benchmark the mcHyS modulation concepts against single technology switches and typical HyS modulation, when considering the implementation of a 100 kW two-level Voltage Source Converter (VSC) deployed for three industrial applications: photovoltaic inverter, electric vehicle fast-charging station, and battery storage systems for grid ancillary service. The two additional switching events of the SiC MOSFET, which differentiate the mcHyS modulation from the typical HyS one, are proven to happen in soft switching, therefore the mcHyS switching performances are not penalized. Furthermore, the analysis presented shows how the studied mcHyS modulation performs against the single semiconductor technology and the typical HyS solution, in terms of cost and power conversion efficiency. More specifically, it is shown that the HyS solutions are particularly competitive versus the full Si-based VSCs when the application at hand often operates at low partial loads. Finally, a 10kW two-level VSC assembled with mcHyS is tested so to compare its efficiency versus single technology switches.

Original languageEnglish
Number of pages14
JournalIEEE Journal of Emerging and Selected Topics in Power Electronics
DOIs
Publication statusE-pub ahead of print - 2022

Keywords

  • Costs
  • Double Pulse Test
  • Grid connected Voltage Source Converter
  • Hybrid Si/SiC switch
  • Insulated gate bipolar transistors
  • Modulation
  • MOSFET
  • SiC MOSFET
  • Silicon
  • Silicon carbide
  • Switches

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