Hydrogen sulfide detection properties of Pt-gated AlGaN/GaN HEMT-sensor

Robert Sokolovskij, Jian Zhang, Elina Iervolino, Changhui Zhao, Fabio Santagata, Fei Wang, Hongyu Yu, Pasqualina M. Sarro, Guo Qi Zhang

Research output: Contribution to journalArticleScientificpeer-review

8 Citations (Scopus)
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Abstract

AlGaN/GaN high electron mobility transistor (HEMT)-based sensors with catalytic platinum gate were micro-fabricated on commercially available epitaxial wafers and extensively characterized for ppm level hydrogen sulfide (H2S) detection for industrial safety applications. High operating temperature above 150 °C enabled large signal variation (ΔIDS) of 2.17 and sensing response of 112% for 90 ppm H2S in dry air as well as high stability across a wide range of biasing conditions. Transient response measurements demonstrated stable operation, superb response and recovery, with good repeatability. The measured sensing signal rise (fall) times reduced from 476 (1316) s to 219 (507) s when the temperature was increased from 200 °C to 250 °C. The response to 90 ppm H2S was 4.5x larger than to H2 and the device showed stable operation over an extended time period.

Original languageEnglish
Pages (from-to)636-644
Number of pages9
JournalSensors and Actuators, B: Chemical
Volume274
DOIs
Publication statusPublished - 2018

Keywords

  • 2DEG
  • AlGaN/GaN
  • Gas sensor
  • HS
  • HEMT
  • Pt

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