Impact of g -factors and valleys on spin qubits in a silicon double quantum dot

J.C.C. Hwang, C.H. Yang, M. Veldhorst, N. Hendrickx, M. A. Fogarty, W. Huang, F. E. Hudson, A. Morello, A. S. Dzurak

Research output: Contribution to journalArticleScientificpeer-review

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We define single electron spin qubits in a silicon metal-oxide-semiconductor double quantum dot system. By mapping the qubit resonance frequency as a function of a gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an intervalley spin-orbit coupling. We fit the data from which we extract an intervalley coupling strength of 43 MHz. In addition, we observe a narrow resonance near the primary qubit resonance when we operate the device in the (1,1) charge configuration. The experimental data are consistent with a simulation involving two weakly exchanged-coupled spins with a Zeeman energy difference of 1 MHz, of the same order as the Rabi frequency. We conclude that the narrow resonance is the result of driven transitions between the T- and T+ triplet states, using an electron spin resonance signal of frequency located halfway between the resonance frequencies of the two individual spins. The findings presented here offer an alternative method of implementing two-qubit gates, of relevance to the operation of larger-scale spin qubit systems.

Original languageEnglish
Article number045302
Number of pages7
JournalPhysical Review B (Condensed Matter and Materials Physics)
Issue number4
Publication statusPublished - 2017

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