TY - JOUR
T1 - Impact of g -factors and valleys on spin qubits in a silicon double quantum dot
AU - Hwang, J.C.C.
AU - Yang, C.H.
AU - Veldhorst, M.
AU - Hendrickx, N.
AU - Fogarty, M. A.
AU - Huang, W.
AU - Hudson, F. E.
AU - Morello, A.
AU - Dzurak, A. S.
PY - 2017
Y1 - 2017
N2 - We define single electron spin qubits in a silicon metal-oxide-semiconductor double quantum dot system. By mapping the qubit resonance frequency as a function of a gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an intervalley spin-orbit coupling. We fit the data from which we extract an intervalley coupling strength of 43 MHz. In addition, we observe a narrow resonance near the primary qubit resonance when we operate the device in the (1,1) charge configuration. The experimental data are consistent with a simulation involving two weakly exchanged-coupled spins with a Zeeman energy difference of 1 MHz, of the same order as the Rabi frequency. We conclude that the narrow resonance is the result of driven transitions between the T- and T+ triplet states, using an electron spin resonance signal of frequency located halfway between the resonance frequencies of the two individual spins. The findings presented here offer an alternative method of implementing two-qubit gates, of relevance to the operation of larger-scale spin qubit systems.
AB - We define single electron spin qubits in a silicon metal-oxide-semiconductor double quantum dot system. By mapping the qubit resonance frequency as a function of a gate-induced electric field, the spectrum reveals an anticrossing that is consistent with an intervalley spin-orbit coupling. We fit the data from which we extract an intervalley coupling strength of 43 MHz. In addition, we observe a narrow resonance near the primary qubit resonance when we operate the device in the (1,1) charge configuration. The experimental data are consistent with a simulation involving two weakly exchanged-coupled spins with a Zeeman energy difference of 1 MHz, of the same order as the Rabi frequency. We conclude that the narrow resonance is the result of driven transitions between the T- and T+ triplet states, using an electron spin resonance signal of frequency located halfway between the resonance frequencies of the two individual spins. The findings presented here offer an alternative method of implementing two-qubit gates, of relevance to the operation of larger-scale spin qubit systems.
UR - http://resolver.tudelft.nl/uuid:c5383747-d468-468d-bf88-52b332d25ee2
UR - http://www.scopus.com/inward/record.url?scp=85026404890&partnerID=8YFLogxK
U2 - 10.1103/PhysRevB.96.045302
DO - 10.1103/PhysRevB.96.045302
M3 - Article
AN - SCOPUS:85026404890
SN - 1098-0121
VL - 96
JO - Physical Review B (Condensed Matter and Materials Physics)
JF - Physical Review B (Condensed Matter and Materials Physics)
IS - 4
M1 - 045302
ER -