Impact of Interface Charge on the Electrostatics of Field-Plate Assisted RESURF Devices

Boni K. Boksteen, Alessandro Ferrara, Anco Heringa, Peter Steeneken, Raymond J.E. Hueting

Research output: Contribution to journalArticleScientificpeer-review

4 Citations (Scopus)


A systematic study on the effects of arbitrary parasitic charge profiles, such as trapped or fixed charge, on the 2-D potential distribution in the drain extension of reverse-biased field-plate-assisted reduced surface field (RESURF) devices is presented. Using TCAD device simulations and analytical means, the significance of the so-called characteristic or natural length λ is highlighted with respect to the potential distribution and related phenomena in both ideal (virgin) and nonideal (degraded) extensions. Subsequently, a novel and easy-to-use charge-response method is introduced that enables calculation of the potential distribution for an arbitrary parasitic charge profile once the peak potential and lateral fall-off (∝λ) caused by a single unit charge has been determined. This can be used for optimizing and predicting the performance, also after hot carrier injection, of RESURF power devices.
Original languageEnglish
Pages (from-to)2859-2866
JournalIEEE Transactions on Electron Devices
Issue number8
Publication statusPublished - 2014


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