Impact of Interface Charge on the Electrostatics of Field-Plate Assisted RESURF Devices

Boni K. Boksteen; Alessandro  Ferrara; Anco Heringa; Peter Steeneken; Raymond J.E. Hueting

doi:10.1109/TED.2014.2327574

Impact of Interface Charge on the Electrostatics of Field-Plate Assisted RESURF Devices

Boni K. Boksteen, Alessandro Ferrara, Anco Heringa, Peter Steeneken, Raymond J.E. Hueting

QN/Steeneken Lab

Research output: Contribution to journal › Article › Scientific › peer-review

4 Citations (Scopus)

Abstract

A systematic study on the effects of arbitrary parasitic charge profiles, such as trapped or fixed charge, on the 2-D potential distribution in the drain extension of reverse-biased field-plate-assisted reduced surface field (RESURF) devices is presented. Using TCAD device simulations and analytical means, the significance of the so-called characteristic or natural length λ is highlighted with respect to the potential distribution and related phenomena in both ideal (virgin) and nonideal (degraded) extensions. Subsequently, a novel and easy-to-use charge-response method is introduced that enables calculation of the potential distribution for an arbitrary parasitic charge profile once the peak potential and lateral fall-off (∝λ) caused by a single unit charge has been determined. This can be used for optimizing and predicting the performance, also after hot carrier injection, of RESURF power devices.

Original language	English
Pages (from-to)	2859-2866
Journal	IEEE Transactions on Electron Devices
Volume	61
Issue number	8
DOIs	https://doi.org/10.1109/TED.2014.2327574
Publication status	Published - 2014

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title = "Impact of Interface Charge on the Electrostatics of Field-Plate Assisted RESURF Devices",

abstract = "A systematic study on the effects of arbitrary parasitic charge profiles, such as trapped or fixed charge, on the 2-D potential distribution in the drain extension of reverse-biased field-plate-assisted reduced surface field (RESURF) devices is presented. Using TCAD device simulations and analytical means, the significance of the so-called characteristic or natural length λ is highlighted with respect to the potential distribution and related phenomena in both ideal (virgin) and nonideal (degraded) extensions. Subsequently, a novel and easy-to-use charge-response method is introduced that enables calculation of the potential distribution for an arbitrary parasitic charge profile once the peak potential and lateral fall-off (∝λ) caused by a single unit charge has been determined. This can be used for optimizing and predicting the performance, also after hot carrier injection, of RESURF power devices.",

author = "Boksteen, {Boni K.} and Alessandro Ferrara and Anco Heringa and Peter Steeneken and Hueting, {Raymond J.E.}",

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T1 - Impact of Interface Charge on the Electrostatics of Field-Plate Assisted RESURF Devices

AU - Boksteen, Boni K.

AU - Ferrara, Alessandro

AU - Heringa, Anco

AU - Steeneken, Peter

AU - Hueting, Raymond J.E.

PY - 2014

Y1 - 2014

N2 - A systematic study on the effects of arbitrary parasitic charge profiles, such as trapped or fixed charge, on the 2-D potential distribution in the drain extension of reverse-biased field-plate-assisted reduced surface field (RESURF) devices is presented. Using TCAD device simulations and analytical means, the significance of the so-called characteristic or natural length λ is highlighted with respect to the potential distribution and related phenomena in both ideal (virgin) and nonideal (degraded) extensions. Subsequently, a novel and easy-to-use charge-response method is introduced that enables calculation of the potential distribution for an arbitrary parasitic charge profile once the peak potential and lateral fall-off (∝λ) caused by a single unit charge has been determined. This can be used for optimizing and predicting the performance, also after hot carrier injection, of RESURF power devices.

AB - A systematic study on the effects of arbitrary parasitic charge profiles, such as trapped or fixed charge, on the 2-D potential distribution in the drain extension of reverse-biased field-plate-assisted reduced surface field (RESURF) devices is presented. Using TCAD device simulations and analytical means, the significance of the so-called characteristic or natural length λ is highlighted with respect to the potential distribution and related phenomena in both ideal (virgin) and nonideal (degraded) extensions. Subsequently, a novel and easy-to-use charge-response method is introduced that enables calculation of the potential distribution for an arbitrary parasitic charge profile once the peak potential and lateral fall-off (∝λ) caused by a single unit charge has been determined. This can be used for optimizing and predicting the performance, also after hot carrier injection, of RESURF power devices.

U2 - 10.1109/TED.2014.2327574

DO - 10.1109/TED.2014.2327574

M3 - Article

SN - 0018-9383

VL - 61

SP - 2859

EP - 2866

JO - IEEE Transactions on Electron Devices

JF - IEEE Transactions on Electron Devices

IS - 8

ER -

Impact of Interface Charge on the Electrostatics of Field-Plate Assisted RESURF Devices

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