This thesis describes the integration of temperature sensors into a CMOS image sensor (CIS). The temperature sensors provide the in-situ temperature of the pixels as well as the thermal distribution of the pixel array. The temperature and the thermal distribution are intended to be used to compensate for dark current affecting the CIS. Two different types of in-pixel temperature sensors have been explored. The first type of temperature sensor is based on a substrate parasitic bipolar junction transistor (BJT). The second type of temperature sensor that has been explored is based on the nMOS source follower (SF) transistor of the same pixel. The readout system that is used for the temperature sensors and for the image pixels is based on low noise column amplifiers. Both types of in-pixel temperature sensors (IPTS) have been designed implementing different techniques to improve their accuracy. The use of the IPTSs has been proved by measuring three prototypes chips. Also, a novel technique to compensate for the dark current of a CIS by using the IPTS has been proposed.
|Award date||13 Sep 2021|
|Publication status||Published - 2021|
- CMOS image sensor
- temperature sensor
- dark current