In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts

C Zhang; M Neklyudova; L Fang; Q Xu; H Wang; FD Tichelaar; HW Zandbergen

doi:10.1088/0957-4484/26/15/155703

In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts

C Zhang, M Neklyudova, L Fang, Q Xu, H Wang, FD Tichelaar, HW Zandbergen

Research output: Contribution to journal › Article › Scientific › peer-review

3 Citations (Scopus)

Abstract

The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (similar to 10(-2) Omega center dot cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As. The critical current density for breakdown was close to 10(6) A cm(-2) in most cases. A Joule heating and electromigration mechanism for the breakdown process is proposed.

Original language	English
Pages (from-to)	1-7
Number of pages	7
Journal	Nanotechnology
Volume	26
Issue number	15
DOIs	https://doi.org/10.1088/0957-4484/26/15/155703
Publication status	Published - 2015

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title = "In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts",

abstract = "The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (similar to 10(-2) Omega center dot cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As. The critical current density for breakdown was close to 10(6) A cm(-2) in most cases. A Joule heating and electromigration mechanism for the breakdown process is proposed.",

author = "C Zhang and M Neklyudova and L Fang and Q Xu and H Wang and FD Tichelaar and HW Zandbergen",

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T1 - In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts

AU - Zhang, C

AU - Neklyudova, M

AU - Fang, L

AU - Xu, Q

AU - Wang, H

AU - Tichelaar, FD

AU - Zandbergen, HW

PY - 2015

Y1 - 2015

N2 - The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (similar to 10(-2) Omega center dot cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As. The critical current density for breakdown was close to 10(6) A cm(-2) in most cases. A Joule heating and electromigration mechanism for the breakdown process is proposed.

AB - The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (similar to 10(-2) Omega center dot cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As. The critical current density for breakdown was close to 10(6) A cm(-2) in most cases. A Joule heating and electromigration mechanism for the breakdown process is proposed.

U2 - 10.1088/0957-4484/26/15/155703

DO - 10.1088/0957-4484/26/15/155703

M3 - Article

VL - 26

SP - 1

EP - 7

JO - Nanotechnology

JF - Nanotechnology

SN - 0957-4484

IS - 15

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