In situ electrical characterization of tapered InAs nanowires in a transmission electron microscope with ohmic contacts

C Zhang, M Neklyudova, L Fang, Q Xu, H Wang, FD Tichelaar, HW Zandbergen

    Research output: Contribution to journalArticleScientificpeer-review

    3 Citations (Scopus)

    Abstract

    The electrical properties of segments of tapered InAs nanowires (NWs) were investigated by in situ transmission electron microscopy with simultaneous I-V measurements using good ohmic contacts, thus excluding experimental artefacts as Joule heating caused by high-resistivity contacts. At low voltage the resistivity of InAs NWs with a diameter larger than 120 nm is constant (similar to 10(-2) Omega center dot cm). When the current is strongly increased a breakdown of the NW occurs close to the cathode side, whereby the main changes are an electromigration of In and a sublimation of As. The critical current density for breakdown was close to 10(6) A cm(-2) in most cases. A Joule heating and electromigration mechanism for the breakdown process is proposed.
    Original languageEnglish
    Pages (from-to)1-7
    Number of pages7
    JournalNanotechnology
    Volume26
    Issue number15
    DOIs
    Publication statusPublished - 2015

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