In situ preparation of YH2 thin films by PLD for switchable devices

B. Dam*, A. C. Lokhorst, A. Remhof, M. C.R. Heijna, J. H. Rector, D. Borsa, J. W.J. Kerssemakers

*Corresponding author for this work

Research output: Contribution to journalConference articleScientificpeer-review

8 Citations (Scopus)

Abstract

We prepared epitaxial YH2 films on (111) CaF2 by pulsed laser deposition (PLD) from a metallic yttrium target. Without adding any reactive hydrogen, the dihydride is formed in situ due to the hydrogen evolving from the metallic target which contains ~7 at% H. Upon pulsed laser irradiation, the target acts as a pulsed source of both yttrium and hydrogen. The increased hydrogen content of the film as compared to the target is explained to be due to diffusion assisted preferential ablation of hydrogen. Due to this deposition process the hydrogen load on the deposition system is minimized, which is important in view of the fabrication of hydride/oxide stacks for all-solid-state switchable mirror devices. Furthermore, the preparation of both nanocrystalline and epitaxial YH2 films shows the versatility of the PLD process.

Original languageEnglish
Pages (from-to)526-529
Number of pages4
JournalJournal of Alloys and Compounds
Volume356-357
DOIs
Publication statusPublished - 11 Aug 2003
EventProceedings of the Eight International Symposium on Metal Hyd (MH 2002) - Annecy, France
Duration: 2 Sep 20026 Sep 2002

Bibliographical note

Funding Information:
This work is part of the research program of FOM (Fundamenteel Onderzoek der Materie) which is financially supported by NWO (Nederlands Wetenschappelijk Onderzoek).

Keywords

  • Thin films
  • Vapour deposition
  • X-ray diffraction

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