In situ preparation of YH2 thin films by PLD for switchable devices

B. Dam; A. C. Lokhorst; A. Remhof; M. C.R. Heijna; J. H. Rector; D. Borsa; J. W.J. Kerssemakers

doi:10.1016/S0925-8388(03)00117-8

In situ preparation of YH₂ thin films by PLD for switchable devices

B. Dam^*, A. C. Lokhorst, A. Remhof, M. C.R. Heijna, J. H. Rector, D. Borsa, J. W.J. Kerssemakers

^*Corresponding author for this work

Research output: Contribution to journal › Conference article › Scientific › peer-review

10 Citations (Scopus)

Abstract

We prepared epitaxial YH₂ films on (111) CaF₂ by pulsed laser deposition (PLD) from a metallic yttrium target. Without adding any reactive hydrogen, the dihydride is formed in situ due to the hydrogen evolving from the metallic target which contains ~7 at% H. Upon pulsed laser irradiation, the target acts as a pulsed source of both yttrium and hydrogen. The increased hydrogen content of the film as compared to the target is explained to be due to diffusion assisted preferential ablation of hydrogen. Due to this deposition process the hydrogen load on the deposition system is minimized, which is important in view of the fabrication of hydride/oxide stacks for all-solid-state switchable mirror devices. Furthermore, the preparation of both nanocrystalline and epitaxial YH₂ films shows the versatility of the PLD process.

Original language	English
Pages (from-to)	526-529
Number of pages	4
Journal	Journal of Alloys and Compounds
Volume	356-357
DOIs	https://doi.org/10.1016/S0925-8388(03)00117-8
Publication status	Published - 11 Aug 2003
Event	Proceedings of the Eight International Symposium on Metal Hyd (MH 2002) - Annecy, France Duration: 2 Sept 2002 → 6 Sept 2002

Bibliographical note

Funding Information:
This work is part of the research program of FOM (Fundamenteel Onderzoek der Materie) which is financially supported by NWO (Nederlands Wetenschappelijk Onderzoek).

Keywords

Thin films
Vapour deposition
X-ray diffraction

Access to Document

10.1016/S0925-8388(03)00117-8

Cite this

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title = "In situ preparation of YH2 thin films by PLD for switchable devices",

abstract = "We prepared epitaxial YH2 films on (111) CaF2 by pulsed laser deposition (PLD) from a metallic yttrium target. Without adding any reactive hydrogen, the dihydride is formed in situ due to the hydrogen evolving from the metallic target which contains ~7 at% H. Upon pulsed laser irradiation, the target acts as a pulsed source of both yttrium and hydrogen. The increased hydrogen content of the film as compared to the target is explained to be due to diffusion assisted preferential ablation of hydrogen. Due to this deposition process the hydrogen load on the deposition system is minimized, which is important in view of the fabrication of hydride/oxide stacks for all-solid-state switchable mirror devices. Furthermore, the preparation of both nanocrystalline and epitaxial YH2 films shows the versatility of the PLD process.",

keywords = "Thin films, Vapour deposition, X-ray diffraction",

author = "B. Dam and Lokhorst, {A. C.} and A. Remhof and Heijna, {M. C.R.} and Rector, {J. H.} and D. Borsa and Kerssemakers, {J. W.J.}",

note = "Funding Information: This work is part of the research program of FOM (Fundamenteel Onderzoek der Materie) which is financially supported by NWO (Nederlands Wetenschappelijk Onderzoek).; Proceedings of the Eight International Symposium on Metal Hyd (MH 2002) ; Conference date: 02-09-2002 Through 06-09-2002",

year = "2003",

month = aug,

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doi = "10.1016/S0925-8388(03)00117-8",

language = "English",

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journal = "Journal of Alloys and Compounds",

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T1 - In situ preparation of YH2 thin films by PLD for switchable devices

AU - Dam, B.

AU - Lokhorst, A. C.

AU - Remhof, A.

AU - Heijna, M. C.R.

AU - Rector, J. H.

AU - Borsa, D.

AU - Kerssemakers, J. W.J.

N1 - Funding Information: This work is part of the research program of FOM (Fundamenteel Onderzoek der Materie) which is financially supported by NWO (Nederlands Wetenschappelijk Onderzoek).

PY - 2003/8/11

Y1 - 2003/8/11

N2 - We prepared epitaxial YH2 films on (111) CaF2 by pulsed laser deposition (PLD) from a metallic yttrium target. Without adding any reactive hydrogen, the dihydride is formed in situ due to the hydrogen evolving from the metallic target which contains ~7 at% H. Upon pulsed laser irradiation, the target acts as a pulsed source of both yttrium and hydrogen. The increased hydrogen content of the film as compared to the target is explained to be due to diffusion assisted preferential ablation of hydrogen. Due to this deposition process the hydrogen load on the deposition system is minimized, which is important in view of the fabrication of hydride/oxide stacks for all-solid-state switchable mirror devices. Furthermore, the preparation of both nanocrystalline and epitaxial YH2 films shows the versatility of the PLD process.

AB - We prepared epitaxial YH2 films on (111) CaF2 by pulsed laser deposition (PLD) from a metallic yttrium target. Without adding any reactive hydrogen, the dihydride is formed in situ due to the hydrogen evolving from the metallic target which contains ~7 at% H. Upon pulsed laser irradiation, the target acts as a pulsed source of both yttrium and hydrogen. The increased hydrogen content of the film as compared to the target is explained to be due to diffusion assisted preferential ablation of hydrogen. Due to this deposition process the hydrogen load on the deposition system is minimized, which is important in view of the fabrication of hydride/oxide stacks for all-solid-state switchable mirror devices. Furthermore, the preparation of both nanocrystalline and epitaxial YH2 films shows the versatility of the PLD process.

KW - Thin films

KW - Vapour deposition

KW - X-ray diffraction

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DO - 10.1016/S0925-8388(03)00117-8

M3 - Conference article

AN - SCOPUS:0042196536

SN - 0925-8388

VL - 356-357

SP - 526

EP - 529

JO - Journal of Alloys and Compounds

JF - Journal of Alloys and Compounds

T2 - Proceedings of the Eight International Symposium on Metal Hyd (MH 2002)

Y2 - 2 September 2002 through 6 September 2002

ER -