In-situ study by spectroscopic ellipsometry of ETP-CVD a-Si:H

MA Wank, RACMM van Swaaij, MCM van de Sanden

Research output: Chapter in Book/Conference proceedings/Edited volume › Conference contribution › Scientific › peer-review

Original language	Undefined/Unknown
Title of host publication	SAFE 2007 Semiconductor advances for future electornics
Editors	s.n.
Place of Publication	s.l.
Publisher	STW
Pages	558-563
Number of pages	6
ISBN (Print)	978-90-73461-49-9
Publication status	Published - 2007

Name
Publisher	STW

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

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title = "In-situ study by spectroscopic ellipsometry of ETP-CVD a-Si:H",

keywords = "Elektrotechniek, Techniek, conference contrib. refereed, Vakpubl., Overig wet. > 3 pag",

author = "MA Wank and \{van Swaaij\}, RACMM and \{van de Sanden\}, MCM",

year = "2007",

language = "Undefined/Unknown",

isbn = "978-90-73461-49-9",

publisher = "STW",

pages = "558--563",

editor = "s.n.",

booktitle = "SAFE 2007 Semiconductor advances for future electornics",

}

TY - GEN

T1 - In-situ study by spectroscopic ellipsometry of ETP-CVD a-Si:H

AU - Wank, MA

AU - van Swaaij, RACMM

AU - van de Sanden, MCM

PY - 2007

Y1 - 2007

KW - Elektrotechniek

KW - Techniek

KW - conference contrib. refereed

KW - Vakpubl., Overig wet. > 3 pag

M3 - Conference contribution

SN - 978-90-73461-49-9

SP - 558

EP - 563

BT - SAFE 2007 Semiconductor advances for future electornics

A2 - s.n., null

PB - STW

CY - s.l.

ER -