Increased carrier generation rate in Si nanocrystals in SiO2 investigated by induced absorption

WDAM de Boer, MT Trinh, D Timmerman, JM Schins, LDA Siebbeles, T Gregorkiewicz

Research output: Contribution to journal › Article › Scientific › peer-review

Keywords

@article{69abab13ccbb461ab5623d10c56e82bb,

title = "Increased carrier generation rate in Si nanocrystals in SiO2 investigated by induced absorption",

keywords = "CWTS 0.75 <= JFIS < 2.00",

author = "{de Boer}, WDAM and MT Trinh and D Timmerman and JM Schins and LDA Siebbeles and T Gregorkiewicz",

year = "2011",

language = "English",

volume = "99",

pages = "053126--053126--3",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

}

TY - JOUR

T1 - Increased carrier generation rate in Si nanocrystals in SiO2 investigated by induced absorption

AU - de Boer, WDAM

AU - Trinh, MT

AU - Timmerman, D

AU - Schins, JM

AU - Siebbeles, LDA

AU - Gregorkiewicz, T

PY - 2011

Y1 - 2011

KW - CWTS 0.75 <= JFIS < 2.00

M3 - Article

VL - 99

SP - 053126-053126-3

JO - Applied Physics Letters

JF - Applied Physics Letters

SN - 0003-6951

ER -